參數(shù)資料
型號: MBM29DL163TD12PBT
廠商: FUJITSU LTD
元件分類: PROM
英文描述: 1M X 16 FLASH 3V PROM, 120 ns, PBGA48
封裝: PLASTIC, FBGA-48
文件頁數(shù): 4/76頁
文件大?。?/td> 1146K
代理商: MBM29DL163TD12PBT
MBM29DL16XTD/BD-70/90/12
12
s ELECTRICAL CHARACTERISTICS
1.
DC Characteristics
(Continued)
Notes: 1. The ICC current listed includes both the DC operating current and the frequency dependent component.
2. ICC active while Embedded Algorithm (program or erase) is in progress.
3. Automatic sleep mode enables the low power mode when address remain stable for 150 ns.
4. Applicable for only VCC applying.
5. Embedded Algorithm (program or erase) is in progress. (@5 MHz)
Parameter
Symbol
Conditions
Value
Unit
Min.
Max.
Input Leakage Current
ILI
VIN = VSS to VCC, VCC = VCC Max.
–1.0
+1.0
A
Output Leakage Current
ILO
VOUT = VSS to VCC, VCC = VCC Max.
–1.0
+1.0
A
A9, OE, RESET Inputs Leakage
Current
ILIT
VCC = VCC Max.
A9, OE, RESET = 12.5 V
—35
A
VCC Active Current (Note 1)
ICC1
CE = VIL, OE = VIH,
f = 5 MHz
Byte
13
mA
Word
15
CE = VIL, OE = VIH,
f = 1 MHz
Byte
7
mA
Word
7
VCC Active Current (Note 2)
ICC2
CE = VIL, OE = VIH
—35
mA
VCC Current (Standby)
ICC3
VCC = VCC Max., CE = VCC ± 0.3 V,
RESET = VCC ± 0.3 V
—5
A
VCC Current (Standby, Reset)
ICC4
VCC = VCC Max., WP/ACC= VCC±
0.3 V, RESET = VSS ± 0.3 V
—5
A
VCC Current
(Automatic Sleep Mode) (Note 3)
ICC5
VCC = VCC Max., CE = VSS ± 0.3 V,
RESET = VCC ± 0.3 V
VIN = VCC ± 0.3 V or VSS
± 0.3 V
—5
A
VCC Active Current (Note 5)
(Read-While-Program)
ICC6
CE = VIL, OE = VIH
Byte
48
mA
Word
50
VCC Active Current (Note 5)
(Read-While-Erase)
ICC7
CE = VIL, OE = VIH
Byte
48
mA
Word
50
VCC Active Current
(Erase-Suspend-Program)
ICC8
CE = VIL, OE = VIH
—35
mA
ACC Accelerated Program
Current
IACC
VCC = VCC Max.
WP/ACC = VACC Max.
—20
mA
Input Low Level
VIL
—–0.5
0.6
V
Input High Level
VIH
—2.0
VCC+0.3
V
Voltage for WP/ACC Sector
Protection/Unprotection and
Program Acceleration
VACC
—8.5
9.5
V
Voltage for Autoselect and Sector
Protection (A9, OE, RESET)
(Note 4)
VID
11.5
12.5
V
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