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參數(shù)資料
| 型號： | MBC13900T1 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | ULTRA SMALL, PLASTIC, CASE 318M-01, SC-70, 4 PIN |
| 文件頁數(shù)： | 24/24頁 |
| 文件大小： | 691K |
| 代理商： | MBC13900T1 |
Applications Information
MBC13900 Technical Data, Rev. 1.1
Freescale Semiconductor
9
Figure 16. One dB Compression Point versus Collector Current
Figure 17. One dB Compression Point versus Collector Current
5
Applications Information
A flexible applications board topology has been developed to demonstrate the performance of the
MBC13900 at 900 and 1900 MHz. The designs are a compromise of the competing performance
requirements of gain, noise figure, input third-order intercept point (IIP3) and return losses. PCB, samples
and assembly information is available from Freescale under part number KITMBC13900.
5.1
900 MHz LNA
design goals for the circuit are:
NF < 1.2 dB
Gain > 19 dB
Return Loss > 10 dB, input and output
Unconditional stability from 100 MHz to 6 GHz.
-14
14
10
6.0
2.0
-2.0
-6.0
-10
I
C, COLLECTOR CURRENT (mA)
P
1d
B,
1d
B
CO
M
PR
ES
SI
O
N
PO
IN
T
(d
Bm
)
2.0 V
f = 900 MHz
3.0 V
0
20
2.0
4.0
6.0
8.0
10
12
14
16
18
-14
I
C, COLLECTOR CURRENT (mA)
P
1d
B,
1d
B
CO
M
PR
ES
SI
O
N
PO
IN
T
(d
Bm
)
14
10
6.0
2.0
-2.0
-6.0
-10
2.0 V
f = 1.9 GHz
3.0 V
0
20
2.0
4.0
6.0
8.0
10
12
14
16
18
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