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參數(shù)資料
| 型號： | MBC13900T1 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | ULTRA SMALL, PLASTIC, CASE 318M-01, SC-70, 4 PIN |
| 文件頁數(shù)： | 2/24頁 |
| 文件大?。?/td> | 691K |
| 代理商： | MBC13900T1 |
Applications Information
MBC13900 Technical Data, Rev. 1.1
10
Freescale Semiconductor
Typical performance that can be expected from this circuit at 3.0 and 3.5 V VCC is listed in Table 5. The
component values can be changed to enhance the performance of a particular parameter but usually at the
expense of another. Gain can be improved by sacrificing stability (R3 and R5). Input return loss can be
sacrificed to improve noise figure. IIP3 can be improved by increasing emitter degeneration (L3) and bias
current (R2). Unused traces are available on the PCB to add emitter degeneration at leads 1 and 3 of the
device.
Figure 18. 900 MHz LNA Schematic
Figure 19. 900 MHz LNA Board Layout
Table 5. Typical 900 MHz LNA Performance
VCC
IC
(mA)
NF
(dB)
50
Insertion
Gain (dB)
Output IP3
(dBm)
Input Return
Loss (dB)
Output Return
Loss (dB)
3.0
5.0
1.2
19.7
15
10.1
10.2
3.5
6.1
1.21
20.2
17.6
10.8
C3
L1
R4
R3
C2
C4
V
CC
C1
R1
R2
RF In
RF Out
R5
L2
L4
C
7
Gnd
V
CC
C1
R
1
C4
R
5
L2
C2
R3
C5
R2
R
4
L
1
C
6
C3
R6
Component Value
Comments
C1
1.0 F
Optional Bypassing
C2
3.3 pF
DC Block and S22
C3
12 pF
DC Block and S11
C4
0.01 F
Broadband bypass
C5
1.0 F
Broadband bypass
C6
0.3 pF
IIP3 improvement
L1
6.8 nH
Toko LL1608-FS, match, bias
L2
5.6 nH
Toko LL1608-FH, match, bias
L3
<0.5 nH
Emitter L on board (distance to GND vias)
R1
133
Bias
R2
49.9 k
Bias
R3
16.5
Stability, S22
R4
0
Jumper
R5
3.9
Stability, S22
R6
0
Jumper
Vias
D = 15 mil
PCB
FR4
ε
r=4.5, h=25 mil, t=1.75 mil
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