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參數(shù)資料
| 型號： | MBT3906DW1T3 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 200 mA, 40 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | SC-88, 6 PIN |
| 文件頁數(shù)： | 1/16頁 |
| 文件大?。?/td> | 327K |
| 代理商： | MBT3906DW1T3 |
Semiconductor Components Industries, LLC, 2000
February, 2000 – Rev. 1
1
Publication Order Number:
MBT3904DW1T1/D
MBT3904DW1T1,
MBT3906DW1T1,
MBT3946DW1T1
Dual General Purpose
Transistors
The MBT3904DW1T1, MBT3906DW1T1, and MBT3946DW1T1
devices are spin–offs of our popular SOT–23/SOT–323 three–leaded
devices. They are designed for general purpose amplifier applications
and are housed in the SOT–363 six–leaded surface mount package. By
putting two discrete devices in one package, these devices are ideal for
low–power surface mount applications where board space is at a
premium.
h
FE, 100–300
Low V
CE(sat), ≤ 0.4 V
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Available in 8 mm, 7–inch/3,000 Unit Tape and Reel
Device Marking: MBT3904DW1T1 = MA
MBT3906DW1T1 = A2
MBT3946DW1T1 = 46
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
MBT3904DW1T1 (NPN)
MBT3906DW1T1 (PNP)
VCEO
40
–40
Vdc
Collector – Base Voltage
MBT3904DW1T1 (NPN)
MBT3906DW1T1 (PNP)
VCBO
60
–40
Vdc
Emitter – Base Voltage
MBT3904DW1T1 (NPN)
MBT3906DW1T1 (PNP)
VEBO
6.0
–5.0
Vdc
Collector Current — Continuous
MBT3904DW1T1 (NPN)
MBT3906DW1T1 (PNP)
IC
200
–200
mAdc
Electrostatic Discharge
ESD
HBM>16000,
MM>2000
V
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Package Dissipation(1)
TA = 25°C
PD
150
mW
Thermal Resistance Junction to
Ambient
RqJA
833
°C/W
Junction and Storage
Temperature Range
TJ, Tstg
– 55 to +150
°C
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum
1. recommended footprint.
Device
Package
Shipping
ORDERING INFORMATION
MBT3904DW1T1
SOT–363
http://onsemi.com
SOT–363/SC–88
CASE 419B
STYLE 1
3000 Units/Reel
MBT3906DW1T1
SOT–363
3000 Units/Reel
MBT3946DW1T1
SOT–363
3000 Units/Reel
Q1
(1)
(2)
(3)
(4)
(5)
(6)
Q2
1
2
3
6 5
4
Q1
(1)
(2)
(3)
(4)
(5)
(6)
Q2
Q1
(1)
(2)
(3)
(4)
(5)
(6)
Q2
MBT3946DW1T1*
MBT3906DW1T1
MBT3904DW1T1
*Q1 same as MBT3906DW1T1
Q2 same as MBT3904DW1T1
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBT3946DW | 制造商:WEITRON 制造商全稱:Weitron Technology 功能描述:Dual General Purpose Transistor NPN+PNP Silicon |
| MBT3946DW1T1 | 功能描述:兩極晶體管 - BJT 200mA 40V Dual RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MBT3946DW1T1G | 功能描述:兩極晶體管 - BJT 200mA 40V Dual Complementary RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MBT3946DW1T1G | 制造商:ON Semiconductor 功能描述:Bipolar Transistor |
| MBT3946DW1T2 | 功能描述:兩極晶體管 - BJT 200mA 40V Dual RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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