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參數(shù)資料
| 型號(hào)： | MBC13900T1 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | ULTRA SMALL, PLASTIC, CASE 318M-01, SC-70, 4 PIN |
| 文件頁(yè)數(shù)： | 19/24頁(yè) |
| 文件大小： | 691K |
| 代理商： | MBC13900T1 |
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Typical Performance Characteristics
MBC13900 Technical Data, Rev. 1.1
4
Freescale Semiconductor
4
Typical Performance Characteristics
Figure 2. Capacitance versus Voltage
Figure 3. hFE, DC Current Gain versus Collector Current
Output Third Order Intercept [Note 3]
(VCE = 2.0 V, IC = 5.0 mA, f = 0.9 GHz)
(VCE = 2.0 V, IC = 5.0 mA, f = 1.9 GHz)
(VCE = 3.0 V, IC = 3.0 mA, f = 0.9 GHz)
(VCE = 3.0 V, IC = 3.0 mA, f = 1.9 GHz)
OIP3
-
18
21
13.5
19
-
dBm
Note: 1. Pulse width
≤300 s, duty cycle ≤2% pulsed.
2.
Maximum Available Gain and Maximum Stable Gain are defined by the K factor as follows:
, if K > 1,
, if K < 1
3.
Zin and Zout matched for optimum IP3.
Table 4. Electrical Characteristics (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
MAG
S21
S12
---------- K
K
2
1
–
±
=
MSG
S21
S12
----------
=
V
CB, REVERSE VOLTAGE (V)
4.0
3.5
2.5
1.5
1.0
0
0.35
0.2
0.15
0
0.05
0.3
C
,CAPACIT
AN
CE
(pF
)
C
ob
C
cb
f = 1.0 MHz
0.5
2.0
3.0
0.1
0.25
162
2.0 V
3.0 V
160
158
156
154
152
150
148
h FE
,D
C
CU
RR
EN
TG
AI
N
I
C, COLLECTOR CURRENT (mA)
0
2.0
4.0
6.0
8.0
10
12
14
16
18
20
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