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參數(shù)資料
| 型號： | MBC13900T1 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | ULTRA SMALL, PLASTIC, CASE 318M-01, SC-70, 4 PIN |
| 文件頁數(shù)： | 18/24頁 |
| 文件大?。?/td> | 691K |
| 代理商： | MBC13900T1 |
Electrical Specifications
MBC13900 Technical Data, Rev. 1.1
Freescale Semiconductor
3
Table 3. Thermal Characteristic
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction-to-Case
RθJC
400
°C/W
Note: To calculate the junction temperature use TJ = (PD x RθJC) + TC. The case temperature measured on collector
lead adjacent to the package body.
Table 4. Electrical Characteristics
Characteristic
Symbol
Min
Typ
Max
Unit
OFF Characteristic1
Collector-Emitter Breakdown Voltage (IC = 0.1 mA, IB = 0)
V(BR)CEO
6.5
7.5
-
Vdc
Collector-Base Breakdown Voltage (IC = 0.1 mA, IE = 0)
V(BR)CBO
8.0
12
-
Vdc
Emitter-Base Breakdown Voltage (IE = 0.1 mA, IC = 0)
V(BR)EBO
3.0
4.0
-
Vdc
Collector Cutoff Current (VCB = 7.0 V, IE = 0)
ICBO
--
0.1
A
Emitter Cutoff Current (VEB = 2.0 V, IC = 0)
IEBO
--
0.1
A
Base Cutoff Current (VCE = 5.0 V, IB = 0)
ICEO
--
0.1
A
ON Characteristic1
DC Current Gain (VCE = 2.0 V, IC = 5.0 mA)
hFE
100
-
200
-
Dynamic Characteristics
Current Gain Bandwidth Product
(VCE = 2.0 V, IC = 15 mA, f = 0.9 GHz)
fτ
-15-
GHz
Performance Characteristic
Insertion Gain
(VCE = 2.0 V, IC = 5.0 mA, f = 0.9 GHz)
(VCE = 2.0 V, IC = 5.0 mA, f = 1.9 GHz)
(VCE = 3.0 V, IC = 3.0 mA, f = 0.9 GHz)
(VCE = 3.0 V, IC = 3.0 mA, f = 1.9 GHz)
|S21|
2
18.5
13.5
16.5
12.5
19.5
14.5
17.5
13.5
-
dB
Maximum Stable Gain and/or Maximum Available Gain
[Note 2]
(VCE = 2.0 V, IC = 5.0 mA, f = 0.9 GHz)
(VCE = 2.0 V, IC = 5.0 mA, f = 1.9 GHz)
(VCE = 3.0 V, IC = 3.0 mA, f = 0.9 GHz)
(VCE = 3.0 V, IC = 3.0 mA, f = 1.9 GHz)
MSG, MAG
22
18
21
17.5
23
19
22
18.5
-
dB
Minimum Noise Figure
(VCE = 2.0 V, IC = 5.0 mA, f = 0.9 GHz)
(VCE = 2.0 V, IC = 5.0 mA, f = 1.9 GHz)
(VCE = 3.0 V, IC = 3.0 mA, f = 0.9 GHz)
(VCE = 3.0 V, IC = 3.0 mA, f = 1.9 GHz)
NFmin
-
0.8
0.9
0.8
0.9
1.1
0.9
1.1
dB
Associated Gain at Minimum Noise Figure
(VCE = 2.0 V, IC = 5.0 mA, f = 0.9 GHz)
(VCE = 2.0 V, IC = 5.0 mA, f = 1.9 GHz)
(VCE = 3.0 V, IC = 3.0 mA, f = 0.9 GHz)
(VCE = 3.0 V, IC = 3.0 mA, f = 1.9 GHz)
GNF
-
22
16
21
15
-
dB
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