參數(shù)資料
型號(hào): M36W216BI85ZA6
廠(chǎng)商: NUMONYX
元件分類(lèi): 存儲(chǔ)器
英文描述: SPECIALTY MEMORY CIRCUIT, PBGA66
封裝: 12 X 8 MM, 0.80 MM PITCH, LFBGA-66
文件頁(yè)數(shù): 56/62頁(yè)
文件大?。?/td> 380K
代理商: M36W216BI85ZA6
M36W216TI, M36W216BI
6/62
SUMMARY DESCRIPTION
The M36W216TI is a low voltage Multiple Memory
Product which combines two memory devices; a
16 Mbit boot block Flash memory and a 2 Mbit
SRAM. Recommended operating conditions do
not allow both the Flash memory and the SRAM
memory to be active at the same time.
The memory is offered in a Stacked LFBGA66
(12x8mm, 8 x 8 active ball, 0.8 mm pitch) package
and is supplied with all the bits erased (set to ‘1’).
Figure 2. Logic Diagram
Table 1. Signal Names
AI07903
20
A0-A19
EF
DQ0-DQ15
VDDF
M36W216TI
M36W216BI
GF
VSSF
16
WF
RPF
WPF
VDDQF
E1S
GS
WS
UBS
LBS
VSSS
VPPF
VDDS
E2S
A0-A16
Flash and SRAM Address Inputs
A17-A19
Address Inputs for Flash Chip only
DQ0-DQ15
Data Input/Output
VDDF
Flash Power Supply
VDDQF
Flash Power Supply for I/O Buffers
VPPF
Flash Optional Supply Voltage for Fast
Program & Erase
VSSF
Flash Ground
VDDS
SRAM Power Supply
VSSS
SRAM Ground
NC
Not Connected Internally
Flash control functions
EF
Chip Enable input
GF
Output Enable input
WF
Write Enable input
RPF
Reset input
WPF
Write Protect input
SRAM control functions
E1S,E2S
Chip Enable inputs
GS
Output Enable input
WS
Write Enable input
UBS
Upper Byte Enable input
LBS
Lower Byte Enable input
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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M36W216T85ZA6T 制造商:Micron Technology Inc 功能描述:
M36W216TI 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:16 Mbit 1Mb x16, Boot Block Flash Memory and 2 Mbit 128Kb x16 SRAM, Multiple Memory Product
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