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參數(shù)資料
| 型號： | M36W216BI85ZA6 |
| 廠商： | NUMONYX |
| 元件分類： | 存儲器 |
| 英文描述： | SPECIALTY MEMORY CIRCUIT, PBGA66 |
| 封裝： | 12 X 8 MM, 0.80 MM PITCH, LFBGA-66 |
| 文件頁數(shù)： | 5/62頁 |
| 文件大?。?/td> | 380K |
| 代理商： | M36W216BI85ZA6 |
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M36W216TI, M36W216BI
Table 6. DC Characteristics
Symbol
Parameter
Device
Test Condition
Min
Typ
Max
Unit
ILI
Input Leakage Current
Flash & SRAM
0V
≤ VIN ≤ VDDQF
±1
A
ILO
Output Leakage Current
Flash
0V
≤ VOUT ≤ VDDQF
±10
A
SRAM
0V
≤ VOUT ≤ VDDQF,
SRAM Outputs Hi-Z
±1
A
IDDS
VDD Standby Current
Flash
EF =VDDQF ± 0.2V
RPF =VDDQ ± 0.2V
15
50
A
SRAM
E1S ≥ VDDS – 0.2V
VIN ≥ VDDS
0.2V or VIN ≤
0.2V
515
A
IDDD
Supply Current (Reset)
Flash
RPF =VSSF ± 0.2V
15
50
A
IDD
Supply Current
SRAM
VDDS =3.3V,
IOUT = 0 mA, f = 1MHz
1.5
3
mA
VDDS =3.3V,
IOUT = 0 mA, f = fMAX = 1/tAVAV
715
mA
IDDR
Supply Current (Read)
Flash
EF =VIL,GF = VIH, f = 5 MHz
10
20
mA
IDDW
Supply Current
(Program)
Flash
Program in progress
VPPF = 12V ± 5%
10
20
mA
Program in progress
VPPF =VDDF
10
20
mA
IDDE
Supply Current (Erase)
Flash
Erase in progress
VPPF = 12V ± 5%
520
mA
Erase in progress
VPPF =VDDF
520
mA
IDDES
Supply Current
(Program/Erase
Suspend)
Flash
EF =VDDQF ± 0.2V,
Erase suspended
50
A
IPP1
Program Current
(Read or Standby)
Flash
VPPF > VDDF
400
A
IPP2
Program Current
(Read or Standby)
Flash
VPPF ≤ VDDF
5
A
IPPR
Program Current (Reset)
Flash
RPF =VSSF ± 0.2V
5
A
IPPW
Program Current
(Program)
Flash
VPPF = 12V ± 0.5V
Program in progress
10
mA
VPPF =VDDF
Program in progress
5mA
IPPE
Program Current (Erase)
Flash
VPPF = 12V ± 0.5V
Erase in progress
10
mA
VPPF =VDDF
Erase in progress
5
A
VIL
Input Low Voltage
Flash & SRAM
VDDQF =VDDS ≥ 2.7V
–0.3
0.6
V
VIH
Input High Voltage
Flash & SRAM
VDDQF =VDDS ≥ 2.7V
0.7VDDQF
VDDQF
+0.3
V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M36W216BIZA | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 1Mb x16, Boot Block Flash Memory and 2 Mbit 128Kb x16 SRAM, Multiple Memory Product |
| M36W216T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 1Mb x16, Boot Block Flash Memory and 2 Mbit 128Kb x16 SRAM, Multiple Memory Product |
| M36W216T85ZA6T | 制造商:Micron Technology Inc 功能描述: |
| M36W216TI | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 1Mb x16, Boot Block Flash Memory and 2 Mbit 128Kb x16 SRAM, Multiple Memory Product |
| M36W216TI70ZA1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 1Mb x16, Boot Block Flash Memory and 2 Mbit 128Kb x16 SRAM, Multiple Memory Product |
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