參數(shù)資料
型號: M12L64322A-6T
廠商: Electronic Theatre Controls, Inc.
英文描述: PT 5C 5#16 SKT RECP
中文描述: 為512k × 32位× 4個銀行同步DRAM
文件頁數(shù): 20/44頁
文件大?。?/td> 813K
代理商: M12L64322A-6T
ESMT
M12L64322A
Elite Semiconductor Memory Technology Inc.
Publication Date: May. 2004
Revision
:
1.7
20/44
*Note : 1. To prevent bus contention, there should be at least one gap between data in and data out.
5. Write Interrupted by Precharge & DQM
*Note : 1. To prevent bus contention, DQM should be issued which makes at least one gap between data in and data out.
2. To inhibit invalid write, DQM should be issued.
3. This precharge command and burst write command should be of the same bank, otherwise it is not precharge interrupt
but only another bank precharge of four banks operation.
CLK
i ) C M D
i i ) C M D
i i i ) C M D
i v) C M D
DQ M
DQ M
DQ M
DQ M
DQ
DQ
DQ
DQ
D1
D3
D1
D0
D2
D3
D0
D2
W R
(b) CL=3,BL= 4
R D
W R
R D
W R
D1
D3
D0
D2
D1
D3
D0
D2
R D
W R
H i - Z
D1
D3
D0
D2
Q0
*Not e 1
v) C M D
DQ M
DQ
R D
W R
H i - Z
R D
CLK
C M D
DQ M
DQ
D0
D1
D2
W R
* Not e 3
*Not e 2
Ma s k e d b y D Q M
D3
1) N o r m a l W r i t e ( B L = 4 )
t
RDL(min)
PRE
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相關代理商/技術參數(shù)
參數(shù)描述
M12L64322A-6TG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 32 Bit x 4 Banks Synchronous DRAM
M12L64322A-6TG2U 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 32 Bit x 4 Banks
M12L64322A-6TIG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 32 Bit x 4 Banks Synchronous DRAM
M12L64322A-7BG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 32 Bit x 4 Banks Synchronous DRAM
M12L64322A-7BG2U 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 32 Bit x 4 Banks