參數(shù)資料
型號(hào)： M12L64322A-6T
廠商： Electronic Theatre Controls, Inc.
英文描述： PT 5C 5#16 SKT RECP
中文描述： 為512k × 32位× 4個(gè)銀行同步DRAM
文件頁(yè)數(shù)： 15/44頁(yè)
文件大?。?/td> 813K
代理商： M12L64322A-6T
ESMT
Write command
(CS ,CAS ,
WE
= Low, RAS = High)
If the mode register is in the burst write mode, this command sets the burst start
address given by the column address to begin the burst write operation. The first
write data in burst can be input with this command with subsequent data on following
clocks.
Read command
(CS , CAS = Low, RAS ,
WE
= High)
Read data is available afterCAS latency requirements have been met.
This command sets the burst start address given by the column address.
CBR (auto) refresh command
(CS , RAS , CAS = Low,
WE
, CKE = High)
This command is a request to begin the CBR refresh operation. The refresh
address is generated internally.
Before executing CBR refresh, all banks must be precharged.
After this cycle, all banks will be in the idle (precharged) state and ready for a
row activate command.
During t
RC
period (from refresh command to refresh or activate command), the
M12L64322A cannot accept any other command.
M12L64322A
Elite Semiconductor Memory Technology Inc.
Publication Date: May. 2004
Revision
:
1.7
15/44
CLK
CLK
CKE
CKE
CS
RAS
WE
BA0, BA1
(Bank select)
BA0, BA1
(Bank select)
A10
A10
Add
Add
CAS
H
H
Col.
Fig. 4 Column address and
write command
Fig. 5 Column address and
read command
CLK
CKE
BA0, BA1
(Bank select)
A10
Add
H
Fig. 6 Auto refresh command
Col.
CS
RAS
WE
CAS
CS
RAS
WE
CAS
相關(guān)PDF資料
PDF描述
M12L64322A-7T 512K x 32 Bit x 4 Banks Synchronous DRAM
M12S16161A 512K x 16Bit x 2Banks Synchronous DRAM
M12S16161A-10T 512K x 16Bit x 2Banks Synchronous DRAM
M12S16161A-10TG 512K x 16Bit x 2Banks Synchronous DRAM
M12S16161A-15T 512K x 16Bit x 2Banks Synchronous DRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M12L64322A-6TG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 32 Bit x 4 Banks Synchronous DRAM
M12L64322A-6TG2U 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 32 Bit x 4 Banks
M12L64322A-6TIG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 32 Bit x 4 Banks Synchronous DRAM
M12L64322A-7BG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 32 Bit x 4 Banks Synchronous DRAM
M12L64322A-7BG2U 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 32 Bit x 4 Banks
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