參數(shù)資料
型號: M12L64322A-6T
廠商: Electronic Theatre Controls, Inc.
英文描述: PT 5C 5#16 SKT RECP
中文描述: 為512k × 32位× 4個銀行同步DRAM
文件頁數(shù): 16/44頁
文件大?。?/td> 813K
代理商: M12L64322A-6T
ESMT
Self refresh entry command
(CS ,RAS ,CAS , CKE = Low ,
WE
= High)
After the command execution, self refresh operation continues while CKE
remains low. When CKE goes to high, the M12L64322A exits the self refresh mode.
During self refresh mode, refresh interval and refresh operation are performed
internally, so there is no need for external control.
Before executing self refresh, all banks must be precharged.
Burst stop command
(CS ,
WE
= Low,RAS ,CAS = High)
This command terminates the current burst operation.
Burst stop is valid at every burst length.
No operation
(CS = Low ,RAS ,CAS ,
WE
= High)
This command is not a execution command. No operations begin or terminate by
this command.
M12L64322A
Elite Semiconductor Memory Technology Inc.
Publication Date: May. 2004
Revision
:
1.7
16/44
CLK
CKE
CS
RAS
WE
BA0, BA1
(Bank select)
A10
Add
CAS
CLK
CKE
BA0, BA1
(Bank select)
A10
Add
H
Fig. 7 Self refresh entry
command
Fig. 8 Burst stop command
CLK
CKE
BA0, BA1
(Bank select)
A10
Add
H
Fig. 9 No operation
CS
RAS
WE
CAS
CS
RAS
WE
CAS
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M12L64322A-6TG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 32 Bit x 4 Banks Synchronous DRAM
M12L64322A-6TG2U 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 32 Bit x 4 Banks
M12L64322A-6TIG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 32 Bit x 4 Banks Synchronous DRAM
M12L64322A-7BG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 32 Bit x 4 Banks Synchronous DRAM
M12L64322A-7BG2U 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 32 Bit x 4 Banks