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參數(shù)資料
| 型號： | M12L16161A |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 512K x 16Bit x 2Banks Synchronous DRAM |
| 中文描述： | 為512k × 16Bit的X 2Banks同步DRAM |
| 文件頁數(shù)： | 22/27頁 |
| 文件大?。?/td> | 566K |
| 代理商： | M12L16161A |
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M12L16161A
Elite Semiconductor Memory Technology Inc.
P.
22
Publication Date : J an. 2000
Revision : 1.3u
Write Interrupted by Precharge Command & Write Burst stop Cycle @ Burst Length =Full page
*Note:
1. Burst can’t end in full page mode, so auto precharge can’t issue.
2.Data-in at the cycle of interrupted by precharge can not be written into the corresponding memory cell. It is defined
by AC parameter of
t
RDL
.
DQM at write interrupted by precharge command is needed to prevent invalid write.
Input data after Row precharge cycle will be masked internally.
3.Burst stop is valid at every burst length.
C L O C K
C K E
A D D R
D Q
D Q M
A10/AP
RA a
CAa
CAb
RA a
DAa0 DAa1
DAb1
DAb0
DAb2
Row A cti ve
( A- Bank)
W ri te
( A- Ban k)
Burst Stop
W r it e
(A - Ban k)
:D on't C ar e
H I GH
DAa2 DAa3 DAa4
DAb3 DAb4 D Ab5
Precharge
( A- Ban k)
t
B D L
t
RD L
*Not e 2
1
9
2
10
3
4
5
6
7
8
11
12
13
14
17
15
18
16
19
0
C S
R AS
CA S
W E
BA
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| M12L16161A-5.5T | 512K x 16Bit x 2Banks Synchronous DRAM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M12L16161A_05 | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 16Bit x 2Banks Synchronous DRAM |
| M12L16161A_08 | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 16Bit x 2Banks Synchronous DRAM |
| M12L16161A_1 | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 16Bit x 2Banks Synchronous DRAM |
| M12L16161A2Q | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 16Bit x 2Banks |
| M12L16161A-4.3T | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 16Bit x 2Banks Synchronous DRAM |
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