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參數(shù)資料
| 型號(hào)： | M12L16161A |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 512K x 16Bit x 2Banks Synchronous DRAM |
| 中文描述： | 為512k × 16Bit的X 2Banks同步DRAM |
| 文件頁(yè)數(shù)： | 19/27頁(yè) |
| 文件大?。?/td> | 566K |
| 代理商： | M12L16161A |
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M12L16161A
Elite Semiconductor Memory Technology Inc.
P.
19
Publication Date : J an. 2000
Revision : 1.3u
Read & Write Cycle with auto Precharge @ Burst Length =4
*Note: 1.
t
CDL
Should be controlled to meet minimum
t
RAS
before internal precharge start
(In the case of Burst Length=1 & 2 and BRSW mode)
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19
C L O C K
C K E
C A S
A D D R
W E
DQ
D QM
A 1 0 / A P
B A
C L = 2
C L = 3
Row Active
( A - Bank )
Row Active
( B - Bank )
Read with
Auto Precharge
( A - Bank )
A u to P r ec h a r g e
S ta r t P oi n t
(B - B a n k )
: D o n ' t C a r e
Q a 1
Q a 2
Q a 3
D b1
D b2
D b3
D b0
Q a 0
R a
C b
R a
C a
R b
R b
Q a 1
Q a 2
Q a 3
D b1
D b2
D b3
D b0
Q a 0
W r i t e w i t h
A u to P r ec h a r g e
(B - B a n k )
H IG H
Auto Precharge
Start Point
( A - Bank)
C S
R A S
CL= 2
Auto Precharge
Start Point
( A - Bank)
CL= 3
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M12L16161A-5.5T | 512K x 16Bit x 2Banks Synchronous DRAM |
| M12L16161A-5T | 512K x 16Bit x 2Banks Synchronous DRAM |
| M12L16161A-6T | 512K x 16Bit x 2Banks Synchronous DRAM |
| M12L16161A-7T | 512K x 16Bit x 2Banks Synchronous DRAM |
| M12L16161A-8T | 512K x 16Bit x 2Banks Synchronous DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M12L16161A_05 | 制造商:ESMT 制造商全稱(chēng):Elite Semiconductor Memory Technology Inc. 功能描述:512K x 16Bit x 2Banks Synchronous DRAM |
| M12L16161A_08 | 制造商:ESMT 制造商全稱(chēng):Elite Semiconductor Memory Technology Inc. 功能描述:512K x 16Bit x 2Banks Synchronous DRAM |
| M12L16161A_1 | 制造商:ESMT 制造商全稱(chēng):Elite Semiconductor Memory Technology Inc. 功能描述:512K x 16Bit x 2Banks Synchronous DRAM |
| M12L16161A2Q | 制造商:ESMT 制造商全稱(chēng):Elite Semiconductor Memory Technology Inc. 功能描述:512K x 16Bit x 2Banks |
| M12L16161A-4.3T | 制造商:ESMT 制造商全稱(chēng):Elite Semiconductor Memory Technology Inc. 功能描述:512K x 16Bit x 2Banks Synchronous DRAM |
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