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參數(shù)資料
| 型號： | LTC3831IGN |
| 廠商： | LINEAR TECHNOLOGY CORP |
| 元件分類： | 穩(wěn)壓器 |
| 英文描述： | SWITCHING CONTROLLER, 500 kHz SWITCHING FREQ-MAX, PDSO16 |
| 封裝： | 0.150 INCH, PLASTIC, SSOP-16 |
| 文件頁數(shù)： | 6/20頁 |
| 文件大小： | 208K |
| 代理商： | LTC3831IGN |
LTC3831
14
3831fb
APPLICATIONS INFORMATION
output might allow no more than 3% efciency loss at full
load for each MOSFET. Assuming roughly 90% efciency
at this current level, this gives a PMAX value of:
(1.25V)(5A/0.9)(0.03) = 0.21W per FET
and a required RDS(ON) of:
RDS(ON)Q1 =
(2.5V) (0.21W)
(1.25V)(5A)2
= 0.017Ω
RDS(ON)Q2 =
(2.5V) (0.21W)
(2.5V – 1.25V)(5A)2
= 0.017Ω
Note that while the required RDS(ON) values suggest large
MOSFETs, the power dissipation numbers are only 0.21W
per device or less; large TO-220 packages and heat sinks
are not necessarily required in high efciency applications.
Siliconix Si4410DY or International Rectier IRF7413
(both in SO-8) or Siliconix SUD50N03-10 (TO-252) or ON
Semiconductor MTD20N03HDL (DPAK) are small footprint
surface mount devices with RDS(ON) values below 0.03Ω
at 5V of VGS that work well in LTC3831 circuits. Using a
higher PMAX value in the RDS(ON) calculations generally
decreases the MOSFET cost and the circuit efciency and
increases the MOSFET heat sink requirements.
Table 1 highlights a variety of power MOSFETs that are
for use in LTC3831 applications.
Inductor Selection
The inductor is often the largest component in an LTC3831
design and must be chosen carefully. Choose the inductor
value and type based on output slew rate requirements.
The maximum rate of rise of inductor current is set by
the inductor’s value, the input-to-output voltage differen-
tial and the LTC3831’s maximum duty cycle. In a typical
2.5V input 1.25V output application, the maximum rise
time will be:
DCMAX (VIN –VOUT)
LO
=
1.138
LO
A
μs
where LOis the inductor value in μH. With proper frequency
compensation, the combination of the inductor and output
Table 1. Recommended MOSFETs for LTC3831 Applications
PARTS
RDS(ON)
AT 25C (mΩ)
RATED CURRENT (A)
TYPICAL INPUT
CAPACITANCE
CISS (pF)
θJC (°C/W)
TJMAX (°C)
Siliconix SUD50N03-10
T0-252
19
15 at 25°C
10 at 100°C
3200
1.8
175
Siliconix Si4410DY
SO-8
20
10 at 25°C
8 at 70°C
2700
150
ON Semiconductor MTD20N03DHL
D PAK
35
20 at 25°C
16 at 100°C
880
1.67
150
Fairchild FDS6670A
SO-8
8
13 at 25°C
3200
25
150
Fairchild FDS6680
SO-8
10
11.5 at 25°C
2070
25
150
ON Semiconductor MTB75N03HDL
DS PAK
9
75 at 25°C
59 at 100°C
4025
1
150
IR IRL3103S
DD PAK
19
64 at 25°C
45 at 100°C
1600
1.4
175
IR IRLZ44
TO-220
28
50 at 25°C
36 at 100°C
3300
1
175
Fuji 2SK1388
TO-220
37
35 at 25°C
1750
2.08
150
Note: Please refer to the manufacturer’s data sheet for testing conditions and detailed information.
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