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參數(shù)資料
| 型號(hào)： | LTC3831IGN |
| 廠商： | LINEAR TECHNOLOGY CORP |
| 元件分類： | 穩(wěn)壓器 |
| 英文描述： | SWITCHING CONTROLLER, 500 kHz SWITCHING FREQ-MAX, PDSO16 |
| 封裝： | 0.150 INCH, PLASTIC, SSOP-16 |
| 文件頁(yè)數(shù)： | 5/20頁(yè) |
| 文件大?。?/td> | 208K |
| 代理商： | LTC3831IGN |
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LTC3831
13
3831fb
APPLICATIONS INFORMATION
Power MOSFETs
Two N-channel power MOSFETs are required for most
LTC3831 circuits. These should be selected based primarily
on threshold voltage and on-resistance considerations.
Thermal dissipation is often a secondary concern in high
efciency designs. The required MOSFET threshold should
be determined based on the available power supply volt-
ages and/or the complexity of the gate drive charge pump
scheme. In 3.3V input designs where an auxiliary 12V
supply is available to power PVCC1 and PVCC2, standard
MOSFETs with RDS(ON) specied at VGS = 5V or 6V can
be used with good results. The current drawn from this
supply varies with the MOSFETs used and the LTC3831’s
operating frequency, but is generally less than 50mA.
LTC3831 applications that use 5V or lower VIN voltage and
doubling/tripling charge pumps to generate PVCC1 and
PVCC2, do not provide enough gate drive voltage to fully
enhance standard power MOSFETs. Under this condition,
the effective MOSFET RDS(ON) may be quite high, raising
the dissipation in the FETs and reducing efciency. Logic-
level FETs are the recommended choice for 5V or lower
voltage systems. Logic-level FETs can be fully enhanced
with a doubler/tripling charge pump and will operate at
maximum efciency.
After the MOSFET threshold voltage is selected, choose
the RDS(ON) based on the input voltage, the output voltage,
allowable power dissipation and maximum output current.
In a typical LTC3831 circuit operating in continuous mode,
the average inductor current is equal to the output load
current. This current ows through either Q1 or Q2 with the
power dissipation split up according to the duty cycle:
DC(Q1)=
VOUT
VIN
DC(Q2)= 1–
VOUT
VIN
=
VIN –VOUT
VIN
The RDS(ON) required for a given conduction loss can now
be calculated by rearranging the relation P = I2R.
RDS(ON)Q1 =
PMAX(Q1)
DC(Q1) (ILOAD)
2 =
VIN PMAX(Q1)
VOUT (ILOAD)
2
RDS(ON)Q2 =
PMAX(Q2)
DC(Q2) (ILOAD)
2 =
VIN PMAX(Q2)
(VIN –VOUT)(ILOAD)
2
PMAX should be calculated based primarily on required
efciency or allowable thermal dissipation. A typical high
efciency circuit designed for 2.5V input and 1.25V at 5A
Figure 8. Typical Application with VTT = 0.6 VDDQ
TG
IMAX
IFB
BG
PGND
GND
R+
FB
VCC
SS
FREQSET
SHDN
COMP
PVCC2
MBR0530T1
5V
10k
1k
0.1μF
LO
1.2μH
Q2
CIN: SANYO POSCAP 6TPB330M
COUT: SANYO POSCAP 4TPB470M
Q1, Q2: SILICONIX Si4410DY
COUT
470μF
×3
VTT
1.5V
±6A
2k
1%
10k
1%
3831 F08
Q1
MBRS340T3
VDDQ
2.5V
LTC3831
1μF
SHDN
+
4.7μF
PVCC1
R–
+
CIN
330μF
×2
+
0.1μF
C1
33pF
0.01μF
130k
CC
1500pF
RC
15k
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