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參數(shù)資料
| 型號： | LT1160 |
| 廠商： | Linear Technology Corporation |
| 英文描述： | Half-/Full-Bridge N-Channel Power MOSFET Drivers(半橋,N-溝道功率MOS場效應(yīng)管驅(qū)動器) |
| 中文描述： | Half-/Full-Bridge N溝道功率MOSFET驅(qū)動器（半橋的N溝道功率馬鞍山場效應(yīng)管驅(qū)動器） |
| 文件頁數(shù)： | 6/16頁 |
| 文件大小： | 287K |
| 代理商： | LT1160 |
6
LT1160/LT1162
PI
FU
CTIO
N
S
U
U
LT1160
SV
+
(Pin 1):
Main Signal Supply. Must be closely decoupled
to the signal ground Pin 5.
IN TOP (Pin 2):
Top Driver Input. Pin 2 is disabled when Pin
3 is high. A 3k input resistor followed by a 5V internal
clamp prevents saturation of the input transistors.
IN BOTTOM (Pin 3):
Bottom Driver Input. Pin 3 is disabled
when Pin 2 is high. A 3k input resistor followed by a 5V
internal clamp prevents saturation of the input transistors.
UV OUT (Pin 4):
Undervoltage Output. Open collector NPN
output which turns on when V
+
drops below the
undervoltage threshold.
SGND (Pin 5):
Small Signal Ground. Must be routed
separately from other grounds to the system ground.
PGND (Pin 6):
Bottom Driver Power Ground. Connects to
source of bottom N-channel MOSFET.
B GATE FB (Pin 8):
Bottom Gate Feedback. Must connect
directly to the bottom power MOSFET gate. The top
MOSFET turn-on is inhibited until Pin 8 has discharged to
below 2.5V.
B GATE DR (Pin 9):
Bottom Gate Drive. The high current
drive point for the bottom MOSFET. When a gate resistor
is used it is inserted between Pin 9 and the gate of the
MOSFET.
PV
+
(Pin 10):
Bottom Driver Supply. Must be connected to
the same supply as Pin 1.
T SOURCE (Pin 11):
Top Driver Return. Connects to the
top MOSFET source and the low side of the bootstrap
capacitor.
T GATE FB (Pin 12):
Top Gate Feedback. Must connect
directly to the top power MOSFET gate. The bottom
MOSFET turn-on is inhibited until V
12
– V
11
has discharged
to below 2.9V.
T GATE DR (Pin 13):
Top Gate Drive. The high current drive
point for the top MOSFET. When a gate resistor is used it
is inserted between Pin 13 and the gate of the MOSFET.
BOOST (Pin 14):
Top Driver Supply. Connects to the high
side of the bootstrap capacitor.
LT1162
SV
+
(Pins 1, 7):
Main Signal Supply. Must be closely
decoupled to ground Pins 5 and 11.
IN TOP (Pins 2, 8):
Top Driver Input. The Input Top is
disabled when the Input Bottom is high. A 3k input resistor
followed by a 5V internal clamp prevents saturation of the
input transistors.
IN BOTTOM (Pins 3, 9):
Bottom Driver Input. The Input
Bottom is disabled when the Input Top is high. A 3k input
resistor followed by a 5V internal clamp prevents satura-
tion of the input transistors.
UV OUT (Pins 4, 10):
Undervoltage Output. Open collector
NPN output which turns on when V
+
drops below the
undervoltage threshold.
GND (Pins 5, 11):
Ground Connection.
B GATE FB (Pins 6, 12):
Bottom Gate Feedback. Must
connect directly to the bottom power MOSFET gate. The
top MOSFET turn-on is inhibited until Bottom Gate Feed-
back pins have discharged to below 2.5V.
B GATE DR (Pins 13, 19):
Bottom Gate Drive. The high
current drive point for the bottom MOSFET. When a gate
resistor is used it is inserted between the Bottom Gate
Drive pin and the gate of the MOSFET.
PV
+
(Pins 14, 20):
Bottom Driver Supply. Must be con-
nected to the same supply as Pins 1 and 7.
T SOURCE (Pins 15, 21):
Top Driver Return. Connects to
the top MOSFET source and the low side of the bootstrap
capacitor.
T GATE FB (Pins 16, 22):
Top Gate Feedback. Must
connect directly to the top power MOSFET gate. The
bottom MOSFET turn-on is inhibited until V
TGF
– V
TSOURCE
has discharged to below 2.9V.
T GATE DR (Pins 17, 23):
Top Gate Drive. The high current
drive point for the top MOSFET. When a gate resistor is
used it is inserted between the Top Gate Drive pin and the
gate of the MOSFET.
BOOST (Pins 18, 24):
Top Driver Supply. Connects to the
high side of the bootstrap capacitor.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LT1160_1 | 制造商:LINEAR 制造商全稱:LINEAR 功能描述:Half-/Full-Bridge N-Channel Power MOSFET Drivers |
| LT1160CN | 功能描述:IC PWR MOSFET DRIVER N-CH 14-DIP RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時(shí)間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063 |
| LT1160CN#PBF | 功能描述:IC PWR MOSFET DRIVER N-CH 14-DIP RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時(shí)間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063 |
| LT1160CS | 功能描述:IC PWR MOSFET DRIVER N-CH 14SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時(shí)間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063 |
| LT1160CS#PBF | 功能描述:IC PWR MOSFET DRIVER N-CH 14SOIC RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:95 系列:- 配置:高端和低端，獨(dú)立 輸入類型:非反相 延遲時(shí)間:160ns 電流 - 峰:290mA 配置數(shù):1 輸出數(shù):2 高端電壓 - 最大（自引導(dǎo)啟動）:600V 電源電壓:10 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:管件 產(chǎn)品目錄頁面:1381 (CN2011-ZH PDF) |
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