參數(shù)資料
型號(hào): LT1160
廠商: Linear Technology Corporation
英文描述: Half-/Full-Bridge N-Channel Power MOSFET Drivers(半橋,N-溝道功率MOS場(chǎng)效應(yīng)管驅(qū)動(dòng)器)
中文描述: Half-/Full-Bridge N溝道功率MOSFET驅(qū)動(dòng)器(半橋的N溝道功率馬鞍山場(chǎng)效應(yīng)管驅(qū)動(dòng)器)
文件頁(yè)數(shù): 2/16頁(yè)
文件大?。?/td> 287K
代理商: LT1160
2
LT1160/LT1162
ABSOLUTE
AXI
U
RATIU
W
Supply Voltage (Note 1).......................................... 20V
Boost Voltage ......................................................... 75V
Peak Output Currents (< 10
μ
s).............................. 1.5A
Input Pin Voltages .......................... –0.3V to V
+
+ 0.3V
Top Source Voltage ..................................... –5V to 60V
Boost to Source Voltage ........................... –0.3V to 20V
W
W
Operating Temperature Range
Commercial .......................................... 0
°
C to 70
°
C
Industrial ......................................... –40
°
C to 85
°
C
Junction Temperature (Note 2)............................ 125
°
C
Storage Temperature Range ................ –65
°
C to 150
°
C
Lead Temperature (Soldering, 10 sec)................. 300
°
C
PACKAGE/ORDER I
FOR
ATIO
W
U
U
ORDER PART
NUMBER
LT1162CN
LT1162CSW
LT1162IN
LT1162ISW
ORDER PART
NUMBER
LT1160CN
LT1160CS
LT1160IN
LT1160IS
T
JMAX
= 125
°
C,
θ
JA
= 58
°
C/W (N)
T
JMAX
= 125
°
C,
θ
JA
= 80
°
C/W (SW)
Consult factory for Military grade parts.
Test Circuit, T
A
= 25
°
C, V
+
= V
BOOST
= 12V, V
TSOURCE
= 0V, C
GATE
= 3000pF.
Gate Feedback pins connected to Gate Drive pins, unless otherwise specified.
SYMBOL PARAMETER
I
S
DC Supply Current (Note 3)
CONDITIONS
V
+
= 15V, V
INTOP
= 0.8V, V
INBOTTOM
= 2V
V
+
= 15V, V
INTOP
= 2V, V
INBOTTOM
= 0.8V
V
+
= 15V, V
INTOP
= 0.8V, V
INBOTTOM
= 0.8V
V
+
= 15V, V
TSOURCE
= 60V, V
BOOST
= 75V,
V
INTOP
= V
INBOTTOM
= 0.8V
MIN
7
7
7
3
TYP
11
10
11
4.5
MAX
15
15
15
6
UNITS
mA
mA
mA
mA
I
BOOST
Boost Current (Note 3)
V
IL
V
IH
I
IN
V
+UVH
V
+UVL
V
BUVH
V
BUVL
Input Logic Low
Input Logic High
Input Current
V
+
Undervoltage Start-Up Threshold
V
+
Undervoltage Shutdown Threshold
V
BOOST
Undervoltage Start-Up Threshold
V
BOOST
Undervoltage Shutdown Threshold
G
1.4
1.7
7
8.9
8.3
9.3
8.7
0.8
V
V
G
2
V
INTOP
= V
INBOTTOM
= 4V
G
25
9.4
8.8
9.8
9.2
μ
A
V
V
V
V
8.4
7.8
8.8
8.2
V
TSOURCE
= 60V (V
BOOST
– V
TSOURCE
)
V
TSOURCE
= 60V (V
BOOST
– V
TSOURCE
)
ELECTRICAL CHARACTERISTICS
T
JMAX
= 125
°
C,
θ
JA
= 70
°
C/W (N)
T
JMAX
= 125
°
C,
θ
JA
= 110
°
C/W (S)
1
2
3
4
5
6
7
TOP VIEW
N PACKAGE
14-LEAD PDIP
S PACKAGE
14-LEAD PLASTIC SO
14
13
12
11
10
9
8
SV
+
IN TOP
IN BOTTOM
UV OUT
SGND
PGND
NC
BOOST
T GATE DR
T GATE FB
T SOURCE
PV
+
B GATE DR
B GATE
FB
1
2
3
4
5
6
7
8
9
10
11
12
TOP VIEW
N PACKAGE
24-LEAD PDIP
24
23
22
21
20
19
18
17
16
15
14
13
SW PACKAGE
24-LEAD PLASTIC SO WIDE
SV
+
A
IN TOP
A
IN BOTTOM
A
UV
OUT
A
GND A
B GATE FB A
SV
+
B
IN TOP B
IN BOTTOM B
UV
OUT
B
GND B
B GATE FB B
BOOST A
T GATE DR A
T GATE FB A
T SOURCE A
PV
+
A
B GATE DR A
BOOST B
T GATE DR B
T GATE FB B
T SOURCE B
PV
+
B
B GATE DR B
相關(guān)PDF資料
PDF描述
LT1161 1-of-8 Data Selectors/Multiplexers With 3-State Outputs 16-SOIC 0 to 70
LT1161C Quad Protected High-Side MOSFET Driver
LT1161CN Quad Protected High-Side MOSFET Driver
LT1161CS Quad Protected High-Side MOSFET Driver
LT1161I Quad Protected High-Side MOSFET Driver
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
LT1160_1 制造商:LINEAR 制造商全稱:LINEAR 功能描述:Half-/Full-Bridge N-Channel Power MOSFET Drivers
LT1160CN 功能描述:IC PWR MOSFET DRIVER N-CH 14-DIP RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET,電橋驅(qū)動(dòng)器 - 外部開(kāi)關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時(shí)間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大(自引導(dǎo)啟動(dòng)):- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063
LT1160CN#PBF 功能描述:IC PWR MOSFET DRIVER N-CH 14-DIP RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET,電橋驅(qū)動(dòng)器 - 外部開(kāi)關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時(shí)間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大(自引導(dǎo)啟動(dòng)):- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063
LT1160CS 功能描述:IC PWR MOSFET DRIVER N-CH 14SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET,電橋驅(qū)動(dòng)器 - 外部開(kāi)關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時(shí)間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大(自引導(dǎo)啟動(dòng)):- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063
LT1160CS#PBF 功能描述:IC PWR MOSFET DRIVER N-CH 14SOIC RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET,電橋驅(qū)動(dòng)器 - 外部開(kāi)關(guān) 系列:- 標(biāo)準(zhǔn)包裝:95 系列:- 配置:高端和低端,獨(dú)立 輸入類型:非反相 延遲時(shí)間:160ns 電流 - 峰:290mA 配置數(shù):1 輸出數(shù):2 高端電壓 - 最大(自引導(dǎo)啟動(dòng)):600V 電源電壓:10 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:8-SOIC(0.154",3.90mm 寬) 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:管件 產(chǎn)品目錄頁(yè)面:1381 (CN2011-ZH PDF)