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參數(shù)資料
| 型號(hào)： | LM5112-SDX |
| 廠商： | NATIONAL SEMICONDUCTOR CORP |
| 元件分類： | MOSFETs |
| 英文描述： | Tiny 7A MOSFET Gate Driver |
| 中文描述： | 7 A BUF OR INV BASED MOSFET DRIVER, DSO6 |
| 封裝： | 3 X 3 MM, LLP-6 |
| 文件頁(yè)數(shù)： | 9/10頁(yè) |
| 文件大?。?/td> | 236K |
| 代理商： | LM5112-SDX |
Thermal Performance
(Continued)
For LLP-6 package, the integrated circuit die is attached to
leadframe die pad which is soldered directly to the printed
circuit board. This substantially decreases the junction to
ambient thermal resistance (
θ
JA
). By providing suitable
means of heat dispersion from the IC to the ambient through
exposed copper pad, which can readily dissipate heat to the
surroundings,
θ
as low as 40C / Watt is achievable with
the package. The resulting Trise for the driver example
above is thereby reduced to just 5.5 degrees.
Therefore T
RISE
is equal to
T
RISE
= 0.138 x 40 = 5.5C
L
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相關(guān)代理商/技術(shù)參數(shù) |
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| LM5112SDX/NOPB | 功能描述:功率驅(qū)動(dòng)器IC RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| LM5113 | 制造商:TI 制造商全稱:Texas Instruments 功能描述:LM5113 5A, 100V Half-Bridge Gate Driver for Enhancement Mode GaN FETs |
| LM5113_1211 | 制造商:TI 制造商全稱:Texas Instruments 功能描述:LM5113 5A, 100V Half-Bridge Gate Driver for Enhancement Mode GaN FETs |
| LM5113LLPEVB/NOPB | 功能描述:電源管理IC開(kāi)發(fā)工具 LM5113 Eval Brd RoHS:否 制造商:Maxim Integrated 產(chǎn)品:Evaluation Kits 類型:Battery Management 工具用于評(píng)估:MAX17710GB 輸入電壓: 輸出電壓:1.8 V |
| LM5113SD | 制造商:TI 制造商全稱:Texas Instruments 功能描述:LM5113 5A, 100V Half-Bridge Gate Driver for Enhancement Mode GaN FETs |
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