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參數(shù)資料
| 型號(hào)： | LM5112-SDX |
| 廠商： | NATIONAL SEMICONDUCTOR CORP |
| 元件分類： | MOSFETs |
| 英文描述： | Tiny 7A MOSFET Gate Driver |
| 中文描述： | 7 A BUF OR INV BASED MOSFET DRIVER, DSO6 |
| 封裝： | 3 X 3 MM, LLP-6 |
| 文件頁(yè)數(shù)： | 7/10頁(yè) |
| 文件大?。?/td> | 236K |
| 代理商： | LM5112-SDX |
Detailed Operating Description
The LM5112 is a high speed , high peak current (7A) single
channel MOSFET driver. The high peak output current of the
LM5112 will switch power MOSFET’s on and off with short
rise and fall times, thereby reducing switching losses con-
siderably. The LM5112 includes both inverting and non-
inverting inputs that give the user flexibility to drive the
MOSFET with either active low or active high logic signals.
The driver output stage consists of a compound structure
with MOS and bipolar transistor operating in parallel to opti-
mize current capability over a wide output voltage and oper-
ating temperature range. The bipolar device provides high
peak current at the critical Miller plateau region of the MOS-
FET V
GS
, while the MOS device provides rail-to-rail output
swing. The totem pole output drives the MOSFET gate be-
tween the gate drive supply voltage V
CC
and the power
ground potential at the V
EE
pin.
The control inputs of the driver are high impedance CMOS
buffers with TTL compatible threshold voltages. The nega-
tive supply of the input buffer is connected to the input
ground pin IN_REF. An internal level shifting circuit connects
the logic input buffers to the totem pole output drivers. The
level shift circuit and separate input/output ground pins pro-
vide the option of single supply or split supply configurations.
When driving the MOSFET gates from a single positive
supply, the IN_REF and V
EE
pins are both connected to the
power ground.
The isolated input and output stage grounds provide the
capability to drive the MOSFET to a negative V
voltage for
a more robust and reliable off state. In split supply configu-
ration, the IN_REF pin is connected to the ground of the
controller which drives the LM5112 inputs. The V
pin is
connected to a negative bias supply that can range from the
IN_REF potential to as low as 14 V below the Vcc gate drive
supply. For reliable operation, the maximum voltage differ-
ence between V
CC
and IN_REF or between V
CC
and V
EE
is
14V.
The minimum recommended operating voltage between Vcc
and IN_REF is 3.5V. An Under Voltage Lock Out (UVLO)
circuit is included in the LM5112 which senses the voltage
difference between V
CC
and the input ground pin, IN_REF.
When the V
CC
to IN_REF voltage difference falls below 2.8V
the driver is disabled and the output pin is held in the low
state. The UVLO hysteresis prevents chattering during
brown-out conditions; the driver will resume normal opera-
tion when the V
CC
to IN_REF differential voltage exceeds
3.0V.
20066803
FIGURE 2. Simplified Application Block Diagram
L
www.national.com
7
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| LM5112SDX/NOPB | 功能描述:功率驅(qū)動(dòng)器IC RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| LM5113 | 制造商:TI 制造商全稱:Texas Instruments 功能描述:LM5113 5A, 100V Half-Bridge Gate Driver for Enhancement Mode GaN FETs |
| LM5113_1211 | 制造商:TI 制造商全稱:Texas Instruments 功能描述:LM5113 5A, 100V Half-Bridge Gate Driver for Enhancement Mode GaN FETs |
| LM5113LLPEVB/NOPB | 功能描述:電源管理IC開(kāi)發(fā)工具 LM5113 Eval Brd RoHS:否 制造商:Maxim Integrated 產(chǎn)品:Evaluation Kits 類型:Battery Management 工具用于評(píng)估:MAX17710GB 輸入電壓: 輸出電壓:1.8 V |
| LM5113SD | 制造商:TI 制造商全稱:Texas Instruments 功能描述:LM5113 5A, 100V Half-Bridge Gate Driver for Enhancement Mode GaN FETs |
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