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參數(shù)資料
| 型號(hào)： | LM5112-SDX |
| 廠商： | NATIONAL SEMICONDUCTOR CORP |
| 元件分類： | MOSFETs |
| 英文描述： | Tiny 7A MOSFET Gate Driver |
| 中文描述： | 7 A BUF OR INV BASED MOSFET DRIVER, DSO6 |
| 封裝： | 3 X 3 MM, LLP-6 |
| 文件頁數(shù)： | 1/10頁 |
| 文件大小： | 236K |
| 代理商： | LM5112-SDX |
LM5112
Tiny 7A MOSFET Gate Driver
General Description
The LM5112 MOSFET gate driver provides high peak gate
drive current in the tiny LLP-6 package (SOT23 equivalent
footprint) with improved package power dissipation required
for high frequency operation. The compound output driver
stage includes MOS and bipolar transistors operating in
parallel that together sink more than 7Apeak from capacitive
loads. Combining the unique characteristics of MOS and
bipolar devices reduces drive current variation with voltage
and temperature. Under-voltage lockout protection is pro-
vided to prevent damage to the MOSFET due to insufficient
gate turn-on voltage. The LM5112 provides both inverting
and non-inverting inputs to satisfy requirements for inverting
and non-inverting gate drive with a single device type.
Features
n
Compound CMOS and bipolar outputs reduce output
current variation
n
7A sink/3A source current
n
Fast propagation times (25 ns typical)
n
Fast rise and fall times (14 ns/12 ns rise/fall with 2 nF
load)
n
Inverting and non-inverting inputs provide either
configuration with a single device
n
Supply rail under-voltage lockout protection
n
Dedicated input ground (IN_REF) for split supply or
single supply operation
n
Power Enhanced 6-pin LLP package (3.0mm x 3.0mm)
n
Output swings from V
CC
to V
EE
which can be negative
relative to input ground
Block Diagram
20066801
Block Diagram of LM5112
October 2004
L
2004 National Semiconductor Corporation
DS200668
www.national.com
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| LM5115 | Secondary Side Post Regulator Controller |
| LM5115SD | Secondary Side Post Regulator Controller |
| LM5115SDX | Secondary Side Post Regulator Controller |
| LM5115MM | Secondary Side Post Regulator Controller |
| LM5115MMX | Secondary Side Post Regulator Controller |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LM5112SDX/NOPB | 功能描述:功率驅(qū)動(dòng)器IC RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| LM5113 | 制造商:TI 制造商全稱:Texas Instruments 功能描述:LM5113 5A, 100V Half-Bridge Gate Driver for Enhancement Mode GaN FETs |
| LM5113_1211 | 制造商:TI 制造商全稱:Texas Instruments 功能描述:LM5113 5A, 100V Half-Bridge Gate Driver for Enhancement Mode GaN FETs |
| LM5113LLPEVB/NOPB | 功能描述:電源管理IC開發(fā)工具 LM5113 Eval Brd RoHS:否 制造商:Maxim Integrated 產(chǎn)品:Evaluation Kits 類型:Battery Management 工具用于評(píng)估:MAX17710GB 輸入電壓: 輸出電壓:1.8 V |
| LM5113SD | 制造商:TI 制造商全稱:Texas Instruments 功能描述:LM5113 5A, 100V Half-Bridge Gate Driver for Enhancement Mode GaN FETs |
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