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參數(shù)資料
| 型號(hào)： | LC78626E |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 元件分類： | 數(shù)字信號(hào)處理 |
| 英文描述： | 16-bit fixed point DSP with Flash |
| 中文描述： | 具有閃存的 16 位定點(diǎn) DSP |
| 文件頁數(shù)： | 5/32頁 |
| 文件大小： | 475K |
| 代理商： | LC78626E |
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No. 5692-5/32
LC78626E
Parameter
Symbol
Conditions
Ratings
Unit
Maximum power supply voltage
V
DD
max
V
IN
V
OUT
Pd max
V
SS
–0.3 to V
SS
+7.0
V
SS
–0.3 to V
DD
+0.3
V
SS
–0.3 to V
DD
+0.3
V
Input voltage
V
Output voltage
V
Allowable power dissipation
400
mW
Operating temperature range
Topr
–20 to +75
°C
Storage temperature range
Tstg
–40 to +125
°C
Specifications
Absolute Maximum Ratings
at Ta = 25°C, V
SS
= 0V
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
V
DD
1
V
DD
, XV
DD
, LV
DD
, RV
DD
, VV
DD
:
ATT/DF/DAC to the normal speed
3.0
5.5
V
Power supply voltage
V
DD
2
V
DD
, XV
DD
, LV
DD
, RV
DD
, VV
DD
:
All functions guaranteed to 2
×
speed
I/O and input pins with the exception of
EFMI and DRAM0 to DRAM3
3.6
5.5
V
V
IH
1
0.7V
DD
V
DD
V
Input high level voltage
V
IH
2
V
IH
3
EFMI
0.6V
DD
0.45V
DD
V
DD
V
DD
V
DRAM0 to DRAM3
V
V
IL
1
I/O and input pins with the exception of
EFMI and DRAM0 to DRAM3
0
0.3V
DD
V
Input low level voltage
V
IL
2
V
IL
2
t
SU
t
HD
t
WH
t
WL
t
RAC
t
RWC
t
SQE
t
SC
t
SE
t
CSU
t
CHD
t
RCQ
t
CDD
V
IN
1
V
IN
2
f
OP
f
X
EFMI
0
0.4V
DD
0.2V
DD
V
DRAM0 to DRAM3
0
V
Data setup time
COIN, RWC: Figure 1
400
ns
Data hold time
COIN, RWC: Figure 1
400
ns
High level clock pulse width
SBCK, CQCK: Figures 1 to 3
400
ns
Low level clock pulse width
SBCK, CQCK: Figures 1 to 3
400
ns
Data read access time
SQOUT, PW: Figures 2 and 3
0
400
ns
Command transfer time
RWC: Figure 1
1000
ns
Subcode Q read enable time
WRQ: Figure 2, no RWC signal
11.2
ms
Subcode ready cycle time
SFSY: Figure 3
136
μs
Subcode read enable time
SFSY: Figure 3
400
μs
Port input data setup time
CONT2 to CONT5, RWC: Figure 4
400
ns
Port input data hold time
CONT2 to CONT5, RWC: Figure 4
400
ns
Port input clock setup time
RWC, CQCK: Figure 4
100
ns
Port output data delay time
CONT2 TO CONT5, RWC: Figure 5
1200
ns
Input level
EFMI: slice level control, V
DD
= 3.0 V
XIN: C coupling input
0.8
Vp-p
1.0
Vp-p
Range of operating frequencies
EFMI
10
MHz
Crystal oscillator frequency
XIN, XOUT
16.9344
MHz
Allowable Operating Range
at Ta = 25°C, V
SS
= 0V
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Consumption current
I
DD
V
DD
, XV
DD
, LV
DD
, RV
DD
, VV
DD
:
V
DD
= 3.0 to 3.4 V with normal playback
DEFI, EFMI, HFL, TES, RWC, COIN, CQCK,
FMT, MR1, RES, TESD, WOK, PAUSE IN,
SHOCK, TESCLK, TESA, TESB, TESC,
TESGB, TEST1: V
IN
= V
DD
TAI, TEST2 to TEST5, CS, TESE:
V
IN
= V
DD
= 3.4 V
14
20
mA
I
IH
1
5
μA
Input high level current.
I
IH
2
15
55
μA
Electrical Characteristics
at Ta = 25°C, V
DD
= 3.2 V V
SS
= 0V
Continued on next page.
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