參數(shù)資料
型號(hào): L9352-DIE1
廠商: 意法半導(dǎo)體
英文描述: INTELLIGENT QUAD 2X5A/2X2.5A LOW-SIDE SWITCH
中文描述: 智能四2X5A/2X2.5A低邊開(kāi)關(guān)
文件頁(yè)數(shù): 4/21頁(yè)
文件大小: 328K
代理商: L9352-DIE1
L9352
4/21
ABSOLUTE MAXIMUM RATINGS
The absolute maximum ratings are the limiting values for this device. Damage may occur if this device is sub-
jected to conditions which are beyond these values.
THERMAL DATA
Symbol
E
Q
Voltages
V
S
V
CC
, V
DD
V
Q
V
Q
V
IN
, V
EN
V
CLK
V
ST
V
D
V
DRmax
Parameter
Test Conditions
Min
Typ
Max
50
Unit
mJ
Switch off energy for inductive loads
Supply voltage
-0.3
40
V
Supply voltage
Output voltage static
Output voltage during clamping
-0.3
6
40
60
V
V
V
t < 1ms
Input voltage IN1 to IN4, EN
Input Voltage CLK
Output voltage status
I
I
< |10|mA
-1.5
-1.5
-0.3
6
6
6
V
V
V
Recirculation circuits D3, D4
max. reverse breakdown voltage of free
wheeling diodes D3, D4
40
55
V
V
Currents
I
Q1/2
Output current for Q1 and Q2
>5
internal
limited
internal
limited
A
I
Q3/4
Output current for Q3 and Q4
>3
A
I
Q1/2
,
I
PGND1/2
I
Q3/4
,
I
PGND3/4
I
ST
ESD Protection
ESD
Output current at reversal supply for Q1
and Q2
-4
A
Output current at reversal supply for
Q3 and Q4
-2
A
Output current status pin
-5
5
mA
Electrostatical Discharging
GND, PGND, Qx, Dx, CLK, ST, IN,
TEST, EN
Supply pins
MIL883C
±
2
kV
VS,
VCC,VDD
ESD
vs. GND and PGND
±1
kV
Output Pins (Qx, Dx)
vs. Common GND
(PGND1-4 + GND)
±
4
kV
Symbol
T
j
T
jc
Parameter
Test Conditions
Min
-40
Typ
Max
150
Unit
°C
Junction temperature
T
j
Σ
t = 30min
Σ
t = 15min
T
stg
Junction temperature during clamping
(life time)
175
190
°C
T
stg
T
th
Storage temperature
Overtemperature shutdown threshold
-55
175
150
200
°C
°C
(1)
(1)
This parameter will not be tested but assured by design
T
hy
R
thJC
Overtemperature shutdown hysteresis
Thermal resistance junction to case
(1)
10
°C
K/W
R
thJC
2
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