參數(shù)資料
型號: KMB7D0NP30QA
廠商: KEC Holdings
英文描述: N and P-Ch Trench MOSFET
中文描述: N和P通道溝道MOSFET
文件頁數(shù): 3/9頁
文件大?。?/td> 509K
代理商: KMB7D0NP30QA
2007. 6. 28
3/9
KMB7D0NP30QA
Revision No : 2
Note 1>* Pulse test : Pulse width
300
, Duty Cycle
2%.
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Dynamic
Total Gate Charge
Q
g
N-Ch
: V
DS
=15V, I
D
=6.6A,
V
GS
=10V (Fig.1)
P-Ch
: V
DS
=-15V, I
D
=-5A,
V
GS
=-10V (Fig.3)
N-Ch
-
16.4
20.5
nC
P-Ch
-
13
16
N-Ch
: V
DS
=15V, I
D
=6.6A,
V
GS
=4.5V (Fig.1)
P-Ch
: V
DS
=-15V, I
D
=-5A,
V
GS
=-4.5V (Fig.3)
N-Ch
-
7.2
9
P-Ch
-
6.25
7.8
Gate-Source Charge
Q
gs
N-Ch
: V
DS
=15V, I
D
=6.6A,
V
GS
=10V (Fig.1)
P-Ch
: V
DS
=-15V, I
D
=-5A,
V
GS
=-10V (Fig.3)
N-Ch
-
4
-
P-Ch
-
2.6
-
Gate-Drain Charge
Q
gd
N-Ch
-
2.6
-
P-Ch
-
2.9
-
Turn-on Delay time
t
d(on)
N-Ch
: V
DD
=15V, I
D
=6.6A,
V
GS
=10V, R
G
=3
P-Ch
: V
DD
=-15V, V
GS
=-10V,
R
G
=3
, R
L
=2.7
(Fig.2)
(Fig.4)
N-Ch
-
7.4
-
ns
P-Ch
-
4.7
-
Turn-on Rise time
t
r
N-Ch
-
27.7
-
P-Ch
-
7.8
-
Turn-off Delay time
t
d(off)
N-Ch
-
12.2
-
P-Ch
-
47.2
-
Turn-off Fall time
t
f
N-Ch
-
7.6
-
P-Ch
-
22.6
-
Input Capacitance
C
iss
N-Ch
: V
DS
=15V, V
GS
=0V, f=1.0MHz
P-Ch
: V
DS
=-15V, V
GS
=0V, f=1.0MHz
N-Ch
-
742
-
pF
P-Ch
-
820
-
Output Capacitance
C
oss
N-Ch
-
126
-
P-Ch
-
137
-
Reverse transfer Capacitance
C
rss
N-Ch
-
76
-
P-Ch
-
89
-
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