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參數(shù)資料
| 型號(hào)： | KBE00S003M-D411 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1Gb NAND*2 + 256Mb Mobile SDRAM*2 |
| 中文描述： | 1Gb的NAND * 2 256Mb的移動(dòng)SDRAM * 2 |
| 文件頁(yè)數(shù)： | 45/86頁(yè) |
| 文件大?。?/td> | 1808K |
| 代理商： | KBE00S003M-D411 |
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MCP MEMORY
45
KBE00S003M-D411
Revision 1.0
May 2005
DC CHARACTERISTICS
Recommended operating conditions (Voltage referenced to V
SS
= 0V, T
A
= -25 to 85
°
C)
NOTES:
1. Measured with outputs open.
2. Unless otherwise noted, input swing IeveI is CMOS(VIH /VIL=VDDQ/VSSQ).
Parameter
Symbol
Test Condition
KBE00S003M-D411
111MHz@CL3
Unit
Note
Operating Current
(One Bank Active)
I
CC1
Burst length = 1
t
RC
≥
t
RC
(min)
I
O
= 0 mA
80
mA
1
Precharge Standby Current in
power-down mode
I
CC2
P
CKE
≤
V
IL
(max), t
CC
= 10ns
0.6
mA
I
CC2
PS
CKE & CLK
≤
V
IL
(max), t
CC
=
∞
0.6
Precharge Standby Current
in non power-down mode
I
CC2
N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during 20ns
20
mA
I
CC2
NS
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
2
Active Standby Current
in power-down mode
I
CC3
P
CKE
≤
V
IL
(max), t
CC
= 10ns
10
mA
I
CC3
PS
CKE & CLK
≤
V
IL
(max), t
CC
=
∞
2
Active Standby Current
in non power-down mode
(One Bank Active)
I
CC3
N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during 20ns
40
mA
I
CC3
NS
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
10
mA
Operating Current
(Burst Mode)
I
CC
4
I
O
= 0 mA
Page burst
4Banks Activated
t
CCD
= 2CLKs
120
mA
1
Refresh Current
I
CC
5
t
ARFC
≥
t
ARFC
(min)
130
mA
Self Refresh Current
I
CC
6
CKE
≤
0.2V
TCSR Range
Max 40
Max 85
°
C
Full Array
300
800
uA
1/2 of Full Array
240
600
1/4 of Full Array
200
500
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