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參數(shù)資料
| 型號： | K9XXG08UXM-K |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| 中文描述： | 256M × 8位/ 128M的× 16位NAND閃存 |
| 文件頁數(shù)： | 39/39頁 |
| 文件大?。?/td> | 680K |
| 代理商： | K9XXG08UXM-K |
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FLASH MEMORY
39
K9W4G08U1M
K9K2G08U0M
K9W4G16U1M
K9K2G16Q0M
K9K2G16U0M
K9K2G08Q0M
Data Protection & Power up sequence
The device is designed to offer protection from any involuntary program/erase during power-transitions. An internal voltage detector
disables all functions whenever Vcc is below about 1.1V(1.8V device) or 2V(3.3V device). WP pin provides hardware protection and
is recommended to be kept at V
IL
during power-up and power-down. A recovery time of minimum 10
μ
s is required before internal cir-
cuit gets ready for any command sequences as shown in Figure 18. The two step command sequence for program/erase provides
additional software protection.
Figure 18. AC Waveforms for Power Transition
V
CC
WP
High
≈
≈
WE
1.8V device : ~ 1.5V
3.3V device : ~ 2.5V
1.8V device : ~ 1.5V
3.3V device : ~ 2.5V
10
μ
s
≈
≈
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K9XXG08UXM-P | SSR H/S ZS 600V 70A 4-32VDC |
| K9XXG08UXM-Y | 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9XXG16UXM-E | SSR H/S IO 230V 20A 4-32VDC |
| K9XXG16UXM-K | SSR H/S PS 230V 50A 4-20MA E |
| K9XXG16UXM-P | Multi-function, zero cross and proportional output SSR with integrated heat sink. 2-wire Modbus input, 230VAC, 50A single phase output. |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K9XXG08UXM-P | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9XXG08UXM-Y | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9XXG08XXA-XCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Preliminary FLASH MEMORY |
| K9XXG08XXA-XIB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Preliminary FLASH MEMORY |
| K9XXG16UXM-E | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
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