參數(shù)資料
型號(hào): K9XXG08UXM-K
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
中文描述: 256M × 8位/ 128M的× 16位NAND閃存
文件頁(yè)數(shù): 24/39頁(yè)
文件大?。?/td> 680K
代理商: K9XXG08UXM-K
FLASH MEMORY
24
K9W4G08U1M
K9K2G08U0M
K9W4G16U1M
K9K2G16Q0M
K9K2G16U0M
K9K2G08Q0M
X8 device : m = 2112byte
X16 device : m = 1056word
Page Program Operation
CE
CLE
R/B
WE
ALE
RE
80h
70h
I/O
0
Din
N
1 up to m Byte
Serial Input
Din
M
10h
SerialData
Input Command
Column Address
Row Address
Program
Command
Read Status
Command
I/O
0
=0 Successful Program
I/O
0
=1 Error in Program
t
PROG
t
WB
t
WC
t
WC
t
WC
I/Ox
Co.l Add1
Col. Add2
Row Add1
Row Add2 Row Add3
相關(guān)PDF資料
PDF描述
K9XXG08UXM-P SSR H/S ZS 600V 70A 4-32VDC
K9XXG08UXM-Y 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9XXG16UXM-E SSR H/S IO 230V 20A 4-32VDC
K9XXG16UXM-K SSR H/S PS 230V 50A 4-20MA E
K9XXG16UXM-P Multi-function, zero cross and proportional output SSR with integrated heat sink. 2-wire Modbus input, 230VAC, 50A single phase output.
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9XXG08UXM-P 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9XXG08UXM-Y 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9XXG08XXA-XCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Preliminary FLASH MEMORY
K9XXG08XXA-XIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Preliminary FLASH MEMORY
K9XXG16UXM-E 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory