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參數(shù)資料
| 型號： | K9XXG08UXM-K |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| 中文描述： | 256M × 8位/ 128M的× 16位NAND閃存 |
| 文件頁數(shù)： | 2/39頁 |
| 文件大?。?/td> | 680K |
| 代理商： | K9XXG08UXM-K |
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FLASH MEMORY
2
K9W4G08U1M
K9K2G08U0M
K9W4G16U1M
K9K2G16Q0M
K9K2G16U0M
K9K2G08Q0M
Document Title
256M x 8 Bit / 128M x 16 Bit
NAND Flash Memory
Revision History
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near your office.
Revision No
0.9
1.0
1.1
1.2
1.3
1.4
Remark
History
Pb-free Package is added.
K9K2G08U0M-FCB0,FIB0
K9K2G08Q0M-PCB0,PIB0
K9K2G08U0M-PCB0,PIB0
K9K2G16U0M-PCB0,PIB0
K9K2G16Q0M-PCB0,PIB0
K9W4G08U1M-PCB0,PIB0,ECB0,EIB0
K9W4G16U1M-PCB0,PIB0,ECB0,EIB0
Errata is added.(Front Page)-K9K2GXXQ0M
tWC tWP tWH tRC tREH tRP tREA tCEA
Specification 45 25 15 50 15 25 30 45
Relaxed value 80 60 20 80 20 60 60 75
1. The 3rd Byte ID after 90h ID read command is don’t cared.
The 5th Byte ID after 90h ID read command is deleted.
New package dimension is added.(K9W4GXXU1M-KXB0/EXB0)
1. Min valid block of K9W4GXXU1M-YCB0/YIB0 is changed .
- min. 4036 --> 4016
2. Note is added.
(VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for
durations of 20 ns or less.)
AC parameters are changed-K9K2GXXQ0M
tWC tWP tWH tRC tREH tRP tREA tCEA
Before 45 25 15 50 15 25 30 45
After 80 60 20 80 20 60 60 75
Draft Date
Mar. 13.2003
Mar. 17.2003
Apr. 9. 2003
Apr. 15. 2003
Apr. 18. 2003
Aug. 5. 2003
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K9XXG08UXM-P | SSR H/S ZS 600V 70A 4-32VDC |
| K9XXG08UXM-Y | 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9XXG16UXM-E | SSR H/S IO 230V 20A 4-32VDC |
| K9XXG16UXM-K | SSR H/S PS 230V 50A 4-20MA E |
| K9XXG16UXM-P | Multi-function, zero cross and proportional output SSR with integrated heat sink. 2-wire Modbus input, 230VAC, 50A single phase output. |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K9XXG08UXM-P | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9XXG08UXM-Y | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9XXG08XXA-XCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Preliminary FLASH MEMORY |
| K9XXG08XXA-XIB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Preliminary FLASH MEMORY |
| K9XXG16UXM-E | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
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