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參數(shù)資料
| 型號(hào)： | JANSR2N7488T3 |
| 廠商： | International Rectifier |
| 英文描述： | RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) |
| 中文描述： | 抗輻射功率MOSFET的通孔（對(duì)257AA） |
| 文件頁(yè)數(shù)： | 8/8頁(yè) |
| 文件大?。?/td> | 183K |
| 代理商： | JANSR2N7488T3 |
IRHY57133CMSE, JANSR2N7488T3
Pre-Irradiation
8
www.irf.com
Pulse width
≤
300
μ
s; Duty Cycle
≤
2%
Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Total Dose Irradiation with VDS Bias.
104 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Repetitive Rating; Pulse width limited by
maximum junction temperature.
VDD = 50V, starting TJ = 25°C, L= 0.5 mH
Peak IL = 18A, VGS = 12V
ISD
≤
18A, di/dt
≤
280A/
μ
s,
VDD
≤
130V, TJ
≤
150°C
Footnotes:
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER :
205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
.
Data and specifications subject to change without notice. 06/2004
3.05 [.120]
0.13 [.005]
0.71 [.028]
MAX.
B
5.08 [.200]
4.83 [.190]
10.92 [.430]
10.42 [.410]
1.14 [.045]
0.89 [.035]
16.89 [.665]
16.39 [.645]
3
2
1
15.88 [.625]
12.70 [.500]
3X
0.64 [.025]
0.50 [.020]
C A
B
2X
2.54 [.100]
C
10.66 [.420]
10.42 [.410]
A
13.63 [.537]
13.39 [.527]
3 3.81 [.150]
Case Outline and Dimensions — TO-257AA
NOTES:
1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUTLINE CONFORMS TO JEDEC OUTLINE TO-257AA.
1 = DRAIN
2 = SOURCE
LEGEND
3 = GATE
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