參數(shù)資料
型號(hào): JANSR2N7488T3
廠商: International Rectifier
英文描述: RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)
中文描述: 抗輻射功率MOSFET的通孔(對(duì)257AA)
文件頁(yè)數(shù): 5/8頁(yè)
文件大?。?/td> 183K
代理商: JANSR2N7488T3
www.irf.com
5
IRHY57133CMSE, JANSR2N7488T3
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Pre-Irradiation
1
10
100
0
400
800
1200
1600
2000
V , Drain-to-Source Voltage (V)
C
V
C
C
C
=
=
=
=
0V,
C
C
C
ds
f = 1MHz
+ C
gd ,
+ C
C SHORTED
GS
iss
rss
oss
gs
gd
gd
C
iss
C
oss
C
rss
0
10
20
30
40
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V
G
FOR TEST CIRCUIT
SEE FIGURE
I =
13
18A
V
= 26V
DS
V
= 65V
DS
V
= 104V
DS
0.2
0.6
1.0
1.4
1.8
2.2
VSD, Source-toDrain Voltage (V)
0.1
1
10
100
IS
TJ = 25°C
TJ = 150°C
VGS = 0V
1
10
100
1000
VDS , Drain-toSource Voltage (V)
0.1
1
10
100
1000
ID
Tc = 25°C
Tj = 150°C
Single Pulse
1ms
1
0ms
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100μs
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