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參數(shù)資料
| 型號(hào)： | JANSR2N7488T3 |
| 廠商： | International Rectifier |
| 英文描述： | RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) |
| 中文描述： | 抗輻射功率MOSFET的通孔（對(duì)257AA） |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大小： | 183K |
| 代理商： | JANSR2N7488T3 |
www.irf.com
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IRHY57133CMSE, JANSR2N7488T3
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Radiation Characteristics
Fig a.
Single Event Effect, Safe Operating Area
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Parameter
100K Rads (Si)
Min
130
2.0
—
—
—
Units
Test Conditions
Max
—
4.5
100
-100
10
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source
On-State Resistance (TO-257AA) — 0.09
V
GS
= 12V, I
D
= 12A
V
V
GS
= 0V, I
D
= 1.0mA
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20V
V
DS
=104V, V
GS
=0V
nA
μA
—
0.09
V
GS
= 12V, I
D
= 12A
R
DS(on)
V
SD
Diode Forward Voltage
—
1.2
V
V
GS
= 0V, I
D
= 18A
Ion
MeV/(mg/cm
2
)) (MeV) (μm)
@V
=0V @V
=-5V @V
=-10V @V
=-15V @V
=-20V
Br
36.7
309 39.5 130 130 130 130 130
I
59.8
341 32.5 130 130 130 100 50
Au
82.3
350 28.4 130 120 30
LET
Energy Range
V
DS
(V)
— —
0
30
60
90
120
150
-20
-15
-10
-5
0
VGS
V
Br
I
Au
Table 2. Single Event Effect Safe Operating Area
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