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參數(shù)資料
| 型號(hào)： | JANSR2N7488T3 |
| 廠商： | International Rectifier |
| 英文描述： | RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) |
| 中文描述： | 抗輻射功率MOSFET的通孔（對(duì)257AA） |
| 文件頁(yè)數(shù)： | 4/8頁(yè) |
| 文件大?。?/td> | 183K |
| 代理商： | JANSR2N7488T3 |
IRHY57133CMSE, JANSR2N7488T3
Pre-Irradiation
4
www.irf.com
Fig 4.
Normalized On-Resistance
Vs. Temperature
Fig 2.
Typical Output Characteristics
Fig 1.
Typical Output Characteristics
Fig 3.
Typical Transfer Characteristics
0.01
0.1
1
10
100
0.1
1
10
100
20μs PULSE WIDTH
T = 25 C
°
TOP
BOTTOM
VGS
V , Drain-to-Source Voltage (V)
I
D
5.0V
0.1
1
10
100
0.1
1
10
100
20μs PULSE WIDTH
T = 150 C
°
TOP
BOTTOM
VGS
15V
V , Drain-to-Source Voltage (V)
I
D
5.0V
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
T , Junction Temperature ( C)
R
(
D
V
=
I =
GS
12V
18A
0.1
1
10
100
5
7
9
11
13
VDS
20μs PULSE WIDTH
V , Gate-to-Source Voltage (V)
I
D
T = 25 C
T = 150 C
°
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