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參數(shù)資料
| 型號(hào)： | JANSR2N7488T3 |
| 廠商： | International Rectifier |
| 英文描述： | RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) |
| 中文描述： | 抗輻射功率MOSFET的通孔（對(duì)257AA） |
| 文件頁數(shù)： | 7/8頁 |
| 文件大?。?/td> | 183K |
| 代理商： | JANSR2N7488T3 |
www.irf.com
7
IRHY57133CMSE, JANSR2N7488T3
Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T.
V
DS
I
D
I
G
3mA
V
GS
.3
μ
F
50K
.2
μ
F
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
Fig 13b.
Gate Charge Test Circuit
Fig 13a.
Basic Gate Charge Waveform
Fig 12c.
Maximum Avalanche Energy
Vs. Drain Current
Fig 12a.
Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
t
p
D.U.T
L
VDS
-V
DD
DRIVER
A
15V
20V
GS
Pre-Irradiation
25
50
75
100
125
150
0
20
40
60
80
100
120
140
Starting T , Junction Temperature ( C)
E
ID
8.0A
11.4A
18A
TOP
BOTTOM
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