參數(shù)資料
型號： ITF86174SQT
廠商： Intersil Corporation
英文描述： 8360 TBGA C ENCRP
中文描述： 第9A，30V的，0.016歐姆，P溝道，邏輯層次，功率MOSFET
文件頁數(shù)： 8/12頁
文件大?。?/td> 198K
代理商： ITF86174SQT
8
PSPICE Electrical Model
.SUBCKT ITF86174SQT 2 1 3 ;
REV 14 December 1999
CA 12 8 1.65e-9
CB 15 14 1.65e-9
CIN 6 8 1.82e-9
DBODY 5 7 DBODYMOD
DBREAK 7 11 DBREAKMOD
DESD1 91 9 DESD1MOD
DESD2 91 7 DESD2MOD
DPLCAP 10 6 DPLCAPMOD
EBREAK 5 11 17 18 -34.95
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 5 10 8 6 1
EVTHRES 6 21 19 8 1
EVTEMP 6 20 18 22 1
IT 8 17 1
LDRAIN 2 5 1.0e-9
LGATE 1 9 1.04e-9
LSOURCE 3 7 1.29e-10
MMED 16 6 8 8 MMEDMOD
MSTRO 16 6 8 8 MSTROMOD
MWEAK 16 21 8 8 MWEAKMOD
RBREAK 17 18 RBREAKMOD 1
RDRAIN 50 16 RDRAINMOD 1.50e-3
RGATE 9 20 3.63
RLDRAIN 2 5 10
RLGATE 1 9 9 10.4
RLSOURCE 3 7 1.29
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
RSOURCE 8 7 RSOURCEMOD 7.90e-3
RVTHRES 22 8 RVTHRESMOD 1
RVTEMP 18 19 RVTEMPMOD 1
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*180),2))}
.MODEL DBODYMOD D (IS = 2.75e-12 RS = 4.90e-3 TRS1 = 1.30e-3 TRS2 = -8.50e-6 XTI = 4 IKF = 3.4 CJO = 1.25e-9 TT = 6.5e-10 VJ=0.65 M = 0.43)
.MODEL DBREAKMOD D (RS = 1.50e-1 TRS1 = 1.00e-3 TRS2 = 1.00e-6)
.MODEL DESD1MOD D (BV=18.45 TBV1=-1.43E-3 TBV2=0 RS=200 N=13)
.MODEL DESD2MOD D (BV=18.45 TBV1=-1.43E-3 TBV2=0 RS=200 N=13)
.MODEL DPLCAPMOD D (CJO = 9.05e-10 IS = 1e-30 N=10 VJ=0.372 M = 0.34)
.MODEL MMEDMOD PMOS (VTO = -1.94 KP = 8 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 3.63 RS = 0.1)
.MODEL MSTROMOD PMOS (VTO = -2.20 KP = 65 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u LAMBDA=0.15)
.MODEL MWEAKMOD PMOS (VTO = -1.51 KP = 0.35 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 36.3 RS = 0.1)
.MODEL RBREAKMOD RES (TC1 = 7.10e-4 TC2 = -1.02E-6)
.MODEL RDRAINMOD RES (TC1 = 1.60e-2 TC2 = 3.00e-5)
.MODEL RSLCMOD RES (TC1 = 2.00e-3 TC2 = -3.00e-6)
.MODEL RSOURCEMOD RES (TC1 = 0 TC2 = 0)
.MODEL RVTHRESMOD RES (TC1 = 2.10e-3 TC2 = 6.20e-6)
.MODEL RVTEMPMOD RES (TC1 = -5.00e-4 TC2 = 1.20e-6)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 6.2 VOFF= 3.1)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 3.1 VOFF= 6.2)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 1.0 VOFF= -0.5)
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -0.5 VOFF= 1.0)
.ENDS
NOTE: For further discussion of the PSPICE model, consult
A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options
; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley.
18
22
-
+
+
-
5
51
+
-
19
8
+
-
17
18
6
8
+
-
5
8
+
-
RBREAK
RVTEMP
VBAT
RVTHRES
IT
17
18
19
22
12
13
15
S1A
S1B
S2A
S2B
CA
CB
EGS
EDS
14
8
13
8
14
13
MWEAK
DBODY
RSOURCE
SOURCE
3
11
7
LSOURCE
RLSOURCE
CIN
RDRAIN
EVTHRES
16
21
8
MMED
MSTRO
DRAIN
2
LDRAIN
RLDRAIN
DBREAK
DPLCAP
ESLC
RSLC1
51
10
5
50
RSLC2
1
GATE
RGATE
EVTEMP
9
ESG
8
6
LGATE
RLGATE
20
+
-
+
-
EBREAK
DESD1
91
DESD2
6
ITF86174SQT
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