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參數(shù)資料
| 型號： | ITF86174SQT |
| 廠商： | Intersil Corporation |
| 英文描述： | 8360 TBGA C ENCRP |
| 中文描述： | 第9A，30V的，0.016歐姆，P溝道，邏輯層次，功率MOSFET |
| 文件頁數(shù)： | 4/12頁 |
| 文件大?。?/td> | 198K |
| 代理商： | ITF86174SQT |
4
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
FIGURE 6. TRANSFER CHARACTERISTICS
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
Typical Performance Curves
(Continued)
-10
-60
-1
-10
-500
-1
100
μ
s
10ms
1ms
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
T
J
= MAX RATED
T
A
= 25
o
C
SINGLE PULSE
-100
R
θ
JA
= 62.5
o
C/W
0
-1.5
-10
-20
-30
-40
-2.0
-2.5
-3.0
-3.5
I
D
V
GS
, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= -15V
T
J
= 25
o
C
T
J
= 150
o
C
T
J
= -55
o
C
-10
-20
-30
-40
0
-0.5
-1.0
-1.5
0
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= -3V
T
A
= 25
o
C
V
GS
= -3.5V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= -5V
V
GS
= -4.5V
V
GS
= -4V
V
GS
= -10V
I
D
= -1A
10
15
30
-2
-4
-6
-8
-10
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
= -9A
r
D
,
O
)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
-3
-5
-7
-9
20
25
1.0
1.4
1.6
0.6
0.8
1.2
-80
-40
0
40
80
120
160
N
T
J
, JUNCTION TEMPERATURE (
o
C)
O
V
GS
= -10V, I
D
= -9A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0.6
0.8
1.0
1.2
-80
-40
0
40
80
120
160
N
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
= V
DS
, I
D
= -250
μ
A
T
ITF86174SQT
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