參數(shù)資料
型號: ITF86174SQT
廠商: Intersil Corporation
英文描述: 8360 TBGA C ENCRP
中文描述: 第9A,30V的,0.016歐姆,P溝道,邏輯層次,功率MOSFET
文件頁數(shù): 7/12頁
文件大?。?/td> 198K
代理商: ITF86174SQT
7
necessary information for calculation of the steady state
junction temperature or power dissipation. Pulse
applications can be evaluated using the Intersil device Spice
thermal model or manually utilizing the normalized maximum
transient thermal impedance curve.
Displayed on the curve are R
θ
JA
values listed in the Electrical
Specifications table. The points were chosen to depict the
compromise between the copper board area, the thermal
resistance and ultimately the power dissipation, P
DM
.
Thermal resistances corresponding to other copper areas can
be obtained from Figure 23 or by calculation using Equation 2.
R
θ
JA
is defined as the natural log of the area times a coefficient
added to a constant. The area, in square inches is the top
copper area including the gate and source pads.
The transient thermal impedance (Z
θ
JA
) is also effected by
varied top copper board area. Figure 21 shows the effect of
copper pad area on single pulse transient thermal
impedance. Each trace represents a copper pad area in
square inches corresponding to the descending list in the
graph. Spice and SABER thermal models are provided for
each of the listed pad areas.
Copper pad area has no perceivable effect on transient
thermal impedance for pulse widths less than 100ms. For
pulse widths less than 100ms the transient thermal
impedance is determined by the die and package. Therefore,
CTHERM1 through CTHERM5 and RTHERM1 through
RTHERM5 remain constant for each of the thermal models. A
listing of the model component values is available in Table 1.
(EQ. 2)
R
θ
JA
97.5
20.2
Area
(
)
ln
×
=
FIGURE 20. THERMAL RESISTANCE vs MOUNTING PAD AREA
120
160
180
240
0.1
1.0
80
0.001
R
θ
JA
= 97.5 - 20.2*
ln
(AREA)
165.4
o
C/W - 0.035in
2
206.8
o
C/W - 0.0045in
2
θ
J
(
o
C
AREA, TOP COPPER AREA (in
2
)
140
100
0.01
200
220
FIGURE 21. THERMAL IMPEDANCE vs MOUNTING PAD AREA
30
60
90
120
150
0
10
-1
10
0
10
1
10
2
10
3
t, RECTANGULAR PULSE DURATION (s)
Z
θ
J
,
COPPER BOARD AREA - DESCENDING ORDER
0.04in
2
0.28in
2
0.52in
2
0.76in
2
1.00in
2
I
o
C
ITF86174SQT
相關(guān)PDF資料
PDF描述
ITF87008DQT Dual N-Channel,Specified Power MOSFET(雙N溝道邏輯電平功率MOS場效應(yīng)管)
ITF87052SVT 3A, 20V, 0.115 Ohm, P-Channel,2.5V Specified Power MOSFET(3A, 20V, 0.115Ω P溝道2.5V專用功率MOS場效應(yīng)管)
ITF87068SQT 9A, 20V, 0.015 Ohm, P-Channel, 2.5V Specified Power MOSFET(9A, 20V, 0.015Ω P溝道2.5V專用功率MOS場效應(yīng)管)
ITL5-1 Power Triode
ITM-1601A 1/16 duty 1/5 BIAS 16 CHAR X LINE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ITF86182SK8T 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:11A, 30V, 0.0115 Ohm, P-Channel, Logic Level, Power MOSFET
ITF87008DQT 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:7.0A, 20V, 0.023 Ohm, Dual N-Channel, 2.5V Specified Power MOSFET
ITF87012SVT 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:6A, 20V, 0.035 Ohm, N-Channel, 2.5V Specified Power MOSFET
ITF87052SVT 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:3A, 20V, 0.115 Ohm, P-Channel, 2.5V Specified Power MOSFET
ITF87056DQT 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:5A, 20V, 0.045 Ohm, Dual P-Channel, 2.5V Specified Power MOSFET