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參數(shù)資料
| 型號： | ITF86174SQT |
| 廠商： | Intersil Corporation |
| 英文描述： | 8360 TBGA C ENCRP |
| 中文描述： | 第9A，30V的，0.016歐姆，P溝道，邏輯層次，功率MOSFET |
| 文件頁數(shù)： | 3/12頁 |
| 文件大?。?/td> | 198K |
| 代理商： | ITF86174SQT |
3
Typical Performance Curves
FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
AMBIENT TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. PEAK CURRENT CAPABILITY
T
A
, AMBIENT TEMPERATURE (
o
C)
P
0
0
25
50
75
100
150
0.2
0.4
0.6
0.8
1.0
1.2
125
-6
-8
-10
50
75
100
125
150
0
25
I
D
,
T
A
, AMBIENT TEMPERATURE (
o
C)
V
GS
= -4.0V, R
θ
JA
= 187.7
o
C/W
V
GS
= -10V, R
θ
JA
= 62.5
o
C/W
-2
-4
0.01
1
3
10
-4
10
-3
10
-2
t, RECTANGULAR PULSE DURATION (s)
10
-1
10
0
10
1
10
2
10
3
0.001
10
-5
Z
θ
J
,
T
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JA
x R
θ
JA
+ T
A
P
DM
t
1
t
2
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
R
θ
JA
= 62.5
o
C/W
0.1
-10
-100
-800
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
10
-5
I
D
,
t, PULSE WIDTH (s)
V
GS
= -4.0V
R
θ
JA
= 62.5
o
C/W
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
T
C
= 25
o
C
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
I = I
25
150 - T
A
125
ITF86174SQT
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