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參數(shù)資料
| 型號(hào)： | ITF86174SQT |
| 廠商： | Intersil Corporation |
| 英文描述： | 8360 TBGA C ENCRP |
| 中文描述： | 第9A，30V的，0.016歐姆，P溝道，邏輯層次，功率MOSFET |
| 文件頁(yè)數(shù)： | 2/12頁(yè) |
| 文件大?。?/td> | 198K |
| 代理商： | ITF86174SQT |
2
Electrical Specifications
T
A
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
μ
A, V
GS
= 0V Figure 11
-30
-
-
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= -30V, V
GS
= 0V
-
-
-1
μ
A
Gate to Source Leakage Current
I
GSS
V
GS
=
±
20V
-
-
±
10
μ
A
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
μ
A Figure 10
-1.0
-
-2.5
V
Drain to Source On Resistance
r
DS(ON)
I
D
= 9.0A, V
GS
= -10V Figures 8, 9
-
0.012
0.016
I
D
= 4.5A, V
GS
= -4.5V Figure 8
-
0.018
0.024
I
D
= 4.0A, V
GS
= -4.0V Figure 8
-
0.020
0.027
THERMAL SPECIFICATIONS
Thermal Resistance Junction to
Ambient
R
θ
JA
Pad Area = 1.0 in
2
(645.2 mm
2
) (Note 2)
-
-
62.5
o
C/W
Pad Area = 0.035 in
2
(22.4 mm
2
) Figure 20
-
-
165.4
o
C/W
Pad Area = 0.0045 in
2
(2.88 mm
2
) Figure 20
-
-
206.8
o
C/W
SWITCHING SPECIFICATIONS
V
GS
= -4.5V
Turn-On Delay Time
t
d(ON)
V
DD
= -15V, I
D
= 4.5A
V
GS
=
-4.5V,
R
GS
= 6.8
Figures 14, 18, 19
-
19
-
ns
Rise Time
t
r
-
64
-
ns
Turn-Off Delay Time
t
d(OFF)
-
40
-
ns
Fall Time
t
f
-
48
-
ns
SWITCHING SPECIFICATIONS
V
GS
= -10V
Turn-On Delay Time
t
d(ON)
V
DD
= -15V, I
D
= 9.0A
V
GS
=
-10V,
R
GS
= 7.5
Figures 15, 18, 19
-
13
-
ns
Rise Time
t
r
-
52
-
ns
Turn-Off Delay Time
t
d(OFF)
-
67
-
ns
Fall Time
t
f
-
62
-
ns
GATE CHARGE SPECIFICATIONS
Total Gate Charge
Q
g(TOT)
V
GS
= 0V to -10V
V
DD
= -15V,
I
D
= 7.0A,
I
g(REF)
= -1.0mA
Figures 13, 16, 17
-
39
-
nC
Gate Charge at -5V
Q
g(-5)
V
GS
= 0V to -5V
-
22
-
nC
Threshold Gate Charge
Q
g(TH)
V
GS
= 0V to -1V
-
2
-
nC
Gate to Source Gate Charge
Q
gs
-
5.7
-
nC
Gate to Drain “Miller” Charge
Q
gd
-
8.8
-
nC
CAPACITANCE SPECIFICATIONS
Input Capacitance
C
ISS
V
DS
= -25V, V
GS
= 0V,
f = 1MHz
Figure 12
-
2000
-
pF
Output Capacitance
C
OSS
-
475
-
pF
Reverse Transfer Capacitance
C
RSS
-
215
-
pF
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
I
SD
= -9.0A
-
-0.8
-
V
Reverse Recovery Time
t
rr
I
SD
= -9.0A, dI
SD
/dt = 100A/
μ
s
-
26
-
ns
Reverse Recovered Charge
Q
RR
I
SD
= -9.0A, dI
SD
/dt = 100A/
μ
s
-
14
-
nC
ITF86174SQT
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