參數(shù)資料
型號(hào): ISL6532
廠商: Intersil Corporation
英文描述: ACPI Regulator/Controller for Dual Channel DDR Memory Systems
中文描述: ACPI的穩(wěn)壓器/雙通道DDR內(nèi)存控制器系統(tǒng)
文件頁數(shù): 13/14頁
文件大小: 365K
代理商: ISL6532
13
from the switching losses seen when sinking current. When
sourcing current, the upper MOSFET realizes most of the
switching losses. The lower switch realizes most of the
switching losses when the converter is sinking current (see
the equations below). These equations assume linear voltage-
current transitions and do not adequately model power loss
due the reverse-recovery of the upper and lower MOSFET’s
body diode. The gate-charge losses are dissipated in part by
the ISL6532 and do not significantly heat the MOSFETs.
However, large gate-charge increases the switching interval,
t
SW
which increases the MOSFET switching losses. Ensure
that both MOSFETs are within their maximum junction
temperature at high ambient temperature by calculating the
temperature rise according to package thermal-resistance
specifications. A separate heatsink may be necessary
depending upon MOSFET power, package type, ambient
temperature and air flow.
ISL6532 Application Circuit
Figure 7 shows an application circuit utilizing the ISL6532.
Detailed information on the circuit, including a complete Bill-
of-Materials and circuit board description, can be found in
Application Note AN1055.
P
LOWER
= Io
2
x r
DS(ON)
x (1 - D)
Where: D is the duty cycle = V
OUT
/ V
IN
,
t
SW
is the combined switch ON and OFF time, and
f
s
is the switching frequency.
Approximate Losses while Sourcing current
Io
2
r
DS ON
Approximate Losses while Sinking current
P
UPPER
= Io
2
x r
DS(ON)
x D
P
LOWER
Io
2
r
DS ON
)
×
1
D
(
)
×
1
2
--
Io
V
IN
×
t
SW
f
s
×
×
+
=
P
UPPER
)
×
D
×
1
2
--
Io
V
IN
×
t
SW
f
s
×
×
+
=
FIGURE 7. DDR SDRAM AND AGP VOLTAGE REGULATOR USING THE ISL6532
10.0k
1
μ
F
5VSBY
UGATE
FB
COMP
ISL6532
C
17,18
LGATE
VCC12
VTT
VTT
+
V
TT
VREF_IN
VREF_OUT
VTTSNS
PGOOD
+3.3V
V
DDQ
2.5V
Q
1,3
+
+
Q
2,4
VCC5
NCH
G
V
REF
V
DDQ
Q
5
VDDQ
VDDQ
G
5
P
P
S5
S3
SLP_S5#
SLP_S3#
PGOOD
C
16
1
μ
F
R
2
L
1
2.1
μ
H
L
2
2.1
μ
H
4.99k
R
1
C
19
0.47
μ
F
C
6-8
1800
μ
F
C
9-12
22
μ
F
6.8nF
C
14
825
R
6
C
15
1000pF
C
13
56nF
R
5
R
4
R
3
22.6
1.74k
19.1k
1.25V
+
V
DDQ
C
20
220
μ
F
C
21
220
μ
F
C
26
0.1
μ
F
C
27
0.1
μ
F
C
1-3
2200
μ
F
C
4,5
1
μ
F
ISL6532
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