參數(shù)資料
型號(hào): IRFP064V
廠商: International Rectifier
英文描述: Power MOSFET(Vdss=60V, Rds(on)=5.5mohm, Id=130A)
中文描述: 功率MOSFET(減振鋼板基本\u003d 60V的,的Rds(on)\u003d 5.5mohm,身份證\u003d 130A的)
文件頁數(shù): 4/8頁
文件大?。?/td> 210K
代理商: IRFP064V
IRFP064V
4
www.irf.com
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
0
50
100
150
200
250
300
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V
G
I =
FOR TEST CIRCUIT
SEE FIGURE
13
130A
V
= 30V
DS
V
= 48V
DS
0.1
1
10
100
1000
0.0
0.4
V ,Source-to-Drain Voltage (V)
0.8
1.2
1.6
2.0
2.4
I
S
V = 0 V
T = 25 C
T = 175 C
1
10
100
VDS, Drain-to-Source Voltage (V)
0
2000
4000
6000
8000
10000
12000
C
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
1
10
100
1000
VDS , Drain-toSource Voltage (V)
1
10
100
1000
10000
ID
Tc = 25°C
Tj = 175°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100μsec
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