參數(shù)資料
型號(hào)： IRFP064V
廠商： International Rectifier
英文描述： Power MOSFET(Vdss=60V, Rds(on)=5.5mohm, Id=130A)
中文描述： 功率MOSFET（減振鋼板基本\u003d 60V的，的Rds（on）\u003d 5.5mohm，身份證\u003d 130A的）
文件頁數(shù)： 2/8頁
文件大小： 210K
代理商： IRFP064V
IRFP064V
2
www.irf.com
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 130A, V
GS
= 0V
T
J
= 25°C, I
F
= 130A
di/dt = 100A/μs
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
–––
94
360
1.2
140
540
V
ns
nC
Source-Drain Ratings and Characteristics
130
520
A
Starting T
J
= 25°C, L = 260μH
R
G
= 25
, I
AS
= 50A. (See Figure 12)
I
SD
≤
130A, di/dt
≤
230A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
Notes:
Pulse width
≤
400μs; duty cycle
≤
2%.
This is a typical value at device destruction and represents
operation outside rated limits.
This is a calculated value limited to T
J
= 175°C .
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 90A.
Parameter
Min. Typ. Max. Units
60
–––
–––
0.067 –––
–––
–––
2.0
–––
88
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
26
–––
200
–––
100
–––
150
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 78A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 25V, I
D
= 78A
V
DS
= 60V, V
GS
= 0V
V
DS
= 48V, V
GS
= 0V, T
J
= 150°C
V
GS
= 20V
V
GS
= -20V
I
D
= 130A
V
DS
= 48V
V
GS
= 10V, See Fig. 6 and 13
V
DD
= 30V
I
D
= 130A
R
G
= 4.3
V
GS
= 10V, See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
I
AS
= 130A, L = 37μH
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
Drain-to-Source Breakdown Voltage
–––
V
V/°C
m
V
S
5.5
4.0
–––
25
250
100
-100
260
68
94
–––
–––
–––
–––
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
nC
–––
–––
C
iss
C
oss
C
rss
E
AS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
–––
–––
–––
––– 1880
310
6760
1330
290
–––
–––
–––
pF
mJ
nH
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
L
D
Internal Drain Inductance
L
S
Internal Source Inductance
–––
–––
S
D
G
I
GSS
ns
5.0
13
I
DSS
Drain-to-Source Leakage Current
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