參數(shù)資料
型號(hào): IGB03N120H2
廠商: INFINEON TECHNOLOGIES AG
英文描述: HighSpeed 2-Technology
中文描述: 高速2 -技術(shù)
文件頁(yè)數(shù): 6/13頁(yè)
文件大?。?/td> 397K
代理商: IGB03N120H2
IGP03N120H2,
IGW03N120H2
IGB03N120H2
Power Semiconductors
6
Rev. 2, Mar-04
t
,
S
0A
2A
4A
1ns
10ns
100ns
1000ns
t
r
t
d(on)
t
f
t
d(off)
t
,
S
0
50
100
150
1ns
10ns
100ns
1000ns
t
r
t
d(on)
t
f
t
d(off)
I
C
,
COLLECTOR CURRENT
Figure 9. Typical switching times as a
function of collector current
(inductive load,
T
j
= 150
°
C,
V
CE
= 800V,
V
GE
= +15V/0V,
R
G
= 82
,
dynamic test circuit in Fig.E)
R
G
,
GATE RESISTOR
Figure 10. Typical switching times as a
function of gate resistor
(inductive load,
T
j
= 150
°
C,
V
CE
= 800V,
V
GE
= +15V/0V,
I
C
= 3A,
dynamic test circuit in Fig.E)
t
,
S
25°C
50°C
75°C
100°C
125°C
150°C
1ns
10ns
100ns
1000ns
t
r
t
d(on)
t
f
t
d(off)
V
G
,
G
-
E
-50°C
0°C
50°C
100°C
150°C
0V
1V
2V
3V
4V
5V
typ.
min.
max.
T
j
,
JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load,
V
CE
= 800V,
V
GE
= +15V/0V,
I
C
= 3A,
R
G
= 82
,
dynamic test circuit in Fig.E)
T
j
,
JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage
as a function of junction temperature
(
I
C
= 0.09mA)
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