參數(shù)資料
型號： IGB03N120H2
廠商： INFINEON TECHNOLOGIES AG
英文描述： HighSpeed 2-Technology
中文描述： 高速2 -技術(shù)
文件頁數(shù)： 2/13頁
文件大?。?/td> 397K
代理商： IGB03N120H2
IGP03N120H2,
IGW03N120H2
IGB03N120H2
Power Semiconductors
2
Rev. 2, Mar-04
Thermal Resistance
Parameter
Symbol
Conditions
Max. Value
Unit
Characteristic
IGBT thermal resistance,
junction – case
Thermal resistance,
junction – ambient
SMD version, device on PCB
1)
Electrical Characteristic,
at
T
j
= 25
°
C, unless otherwise specified
R
thJC
2.0
R
thJA
P-TO-220-3-1
P-TO-247-3-1
62
40
R
thJA
P-TO-263 (D
2
PAK)
K/W
Value
Typ.
Parameter
Symbol
Conditions
min.
max.
Unit
Static Characteristic
Collector-emitter breakdown voltage
V
(BR)CES
V
CE(sat)
V
GE
=0V,
I
C
=300
μ
A
V
GE
= 15V,
I
C
=3A
T
j
=25
°
C
T
j
=150
°
C
V
GE
= 10V,
I
C
=3A,
T
j
=25
°
C
1200
-
-
Collector-emitter saturation voltage
-
-
-
2.2
2.5
2.4
3
2.8
-
-
3.9
Gate-emitter threshold voltage
V
GE(th)
I
CES
I
C
=90
μ
A,
V
CE
=
V
GE
V
CE
=1200V,
V
GE
=0V
T
j
=25
°
C
T
j
=150
°
C
V
CE
=0V,
V
GE
=20V
V
CE
=20V,
I
C
=3A
2.1
V
Zero gate voltage collector current
-
-
-
-
20
80
μ
A
Gate-emitter leakage current
Transconductance
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
I
GES
g
fs
-
-
-
2
100
-
nA
S
C
iss
C
oss
C
rss
Q
Gate
-
-
-
-
205
24
7
22
-
-
-
-
V
CE
=25V,
V
GE
=0V,
f
=1MHz
pF
V
CC
=960V,
I
C
=3A
V
GE
=15V
P-TO-220-3-1
P-TO-247-3-1
nC
Internal emitter inductance
measured 5mm (0.197 in.) from case
L
E
-
7
13
-
nH
1)
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
2
(one layer, 70
μ
m thick) copper area for
collector connection. PCB is vertical without blown air.
相關(guān)PDF資料
PDF描述
IGP03N120H2 HighSpeed 2-Technology
IGW03N120H2 HighSpeed 2-Technology
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IGB03N120H2ATMA1 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 1.2KV 9.6A 3-Pin(2+Tab) TO-263 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Tape and Reel 制造商:Infineon Technologies AG 功能描述:IGBT 1200V 9.6A 62.5W TO263-3
IGB10N60T 功能描述:IGBT 晶體管 Low Loss IGBT Trench Stop&Fieldstop Tech RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IGB10N60TATMA1 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 600V 20A 3-Pin(2+Tab) TO-263 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Tape and Reel 制造商:Infineon Technologies AG 功能描述:IGBT 600V 20A 110W TO263-3
IGB15N60T 功能描述:IGBT 晶體管 LOW LOSS IGBT TECH 600V 15A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IGB15N60TATMA1 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 600V 30A 3-Pin(2+Tab) TO-263 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Tape and Reel 制造商:Infineon Technologies AG 功能描述:IGBT 600V 15A 130W TO263-3-2
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