參數(shù)資料
型號(hào)： IGB03N120H2
廠商： INFINEON TECHNOLOGIES AG
英文描述： HighSpeed 2-Technology
中文描述： 高速2 -技術(shù)
文件頁(yè)數(shù)： 1/13頁(yè)
文件大?。?/td> 397K
代理商： IGB03N120H2
IGP03N120H2,
IGW03N120H2
IGB03N120H2
Power Semiconductors
1
Rev. 2, Mar-04
HighSpeed 2-Technology
Designed for:
- SMPS
- Lamp Ballast
- ZVS-Converter
- optimised for soft-switching / resonant topologies
2
nd
generation HighSpeed-Technology
for 1200V applications offers:
- loss reduction in resonant circuits
- temperature stable behavior
- parallel switching capability
- tight parameter distribution
-
E
off
optimized for
I
C
=3A
Complete product spectrum and PSpice Models :
http://www.infineon.com/igbt/
Type
V
CE
I
C
G
E
off
T
j
Package
Ordering Code
IGW03N120H2
1200V
3A
0.15mJ
150
°
C
P-TO-247
Q67040-S4596
IGP03N120H2
1200V
3A
0.15mJ
150°C
P-TO-220-3-1
P-TO-263 (D
2
PAK)
Q67040-S4599
IGB03N120H2
1200V
3A
0.15mJ
150°C
Q67040-S4598
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
Triangular collector current
T
C
= 25
°
C,
f
= 140kHz
T
C
= 100
°
C,
f
= 140kHz
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area
V
CE
≤
1200V,
T
j
≤
150
°
C
Gate-emitter voltage
V
CE
I
C
1200
9.6
3.9
V
A
I
Cpuls
-
9.9
9.9
V
GE
P
tot
±
20
62.5
V
Power dissipation
T
C
= 25
°
C
Operating junction and storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
W
T
j
,
T
stg
-
-40...+150
260
225 (for SMD)
°
C
C
E
P-TO-220-3-1
(TO-220AB)
P-TO-263-3-2 (D2-PAK)
(TO-263AB)
P-TO-247-3-1
(TO-247AC)
相關(guān)PDF資料
PDF描述
IGP03N120H2 HighSpeed 2-Technology
IGW03N120H2 HighSpeed 2-Technology
IGB30N60T Low Loss IGBT in TrenchStop and Fieldstop technology
IGP06N60T Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology
IGP10N60T Low Loss IGBT in TrenchStop and Fieldstop technology
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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IGB10N60T 功能描述:IGBT 晶體管 Low Loss IGBT Trench Stop&Fieldstop Tech RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
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IGB15N60T 功能描述:IGBT 晶體管 LOW LOSS IGBT TECH 600V 15A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IGB15N60TATMA1 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 600V 30A 3-Pin(2+Tab) TO-263 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Tape and Reel 制造商:Infineon Technologies AG 功能描述:IGBT 600V 15A 130W TO263-3-2
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