參數(shù)資料
型號(hào)： IGB03N120H2
廠商： INFINEON TECHNOLOGIES AG
英文描述： HighSpeed 2-Technology
中文描述： 高速2 -技術(shù)
文件頁(yè)數(shù)： 3/13頁(yè)
文件大?。?/td> 397K
代理商： IGB03N120H2
IGP03N120H2,
IGW03N120H2
IGB03N120H2
Power Semiconductors
3
Rev. 2, Mar-04
Switching Characteristic, Inductive Load,
at
T
j
=25
°
C
Value
typ.
Parameter
Symbol
Conditions
min.
max.
Unit
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
-
-
-
-
-
-
-
9.2
5.2
281
29
0.14
0.15
0.29
-
-
-
-
-
-
-
ns
T
j
=25
°
C,
V
CC
=800V,
I
C
=3A,
V
GE
=15V/0V,
R
G
=82
,
L
σ
C
σ
Energy losses include
“tail” and diode
reverse recovery.
2)
=180nH,
2)
=40pF
mJ
Switching Characteristic, Inductive Load,
at
T
j
=150
°
C
Value
typ.
Parameter
Symbol
Conditions
min.
max.
Unit
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
-
-
-
-
-
-
-
9.4
6.7
340
63
0.22
0.26
0.48
-
-
-
-
-
-
-
ns
T
j
=150
°
C
V
CC
=800V,
I
C
=3A,
V
GE
=15V/0V,
R
G
=82
,
L
σ
C
σ
Energy losses include
“tail” and diode
reverse recovery.
2)
=180nH,
2)
=40pF
mJ
Switching Energy ZVT, Inductive Load
Value
typ.
Parameter
Symbol
Conditions
min.
max.
Unit
IGBT Characteristic
Turn-off energy
E
off
V
CC
=800V,
I
C
=3A,
V
GE
=15V/0V,
R
G
=82
,
C
r
T
j
=25
°
C
T
j
=150
°
C
2)
=4nF
-
-
0.05
0.09
-
-
mJ
2)
Leakage inductance L
σ
and stray capacity C
σ
due to dynamic test circuit in figure E
3)
Commutation diode from device IKP03N120H2
相關(guān)PDF資料
PDF描述
IGP03N120H2 HighSpeed 2-Technology
IGW03N120H2 HighSpeed 2-Technology
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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