參數(shù)資料
型號： IGP06N60T
廠商： INFINEON TECHNOLOGIES AG
英文描述： Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology
中文描述： 低損耗DuoPack：在TrenchStop和場終止IGBT技術(shù)
文件頁數(shù)： 1/12頁
文件大?。?/td> 330K
代理商： IGP06N60T
IGP06N60T
Low Loss DuoPack : IGBT in TrenchStop and Fieldstop
technology
Features:
Very low
V
CE(sat)
1.5 V (typ.)
Maximum Junction Temperature 175 °C
Short circuit withstand time – 5
μ
s
TrenchStop and Fieldstop technology for 600 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
Low EMI
Qualified according to JEDEC
1
for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models :
http://www.infineon.com/igbt/
Applications:
Variable Speed Drive for washing machines and air conditioners
Buck converters
Type
V
CE
I
C;Tc=100°C
V
CE(sat
),Tj=25°C
TrenchStop Series
q
Power Semiconductors
1
Rev. 2.1 June 06
T
j,max
Marking
Package
IGP06N60T
600V
6A
1.5V
175
°
C
G06T60
PG-TO-220-3-1
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
DC collector current, limited by
T
jmax
T
C
= 25
°
C
T
C
= 100
°
C
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area
V
CE
≤
600V,
T
j
≤
175
°
C
Gate-emitter voltage
Short circuit withstand time
2)
V
GE
= 15V,
V
CC
≤
400V,
T
j
≤
150
°
C
Power dissipation
T
C
= 25
°
C
Operating junction temperature
Storage temperature
Soldering temperature
wavesoldering, 1.6 mm (0.063 in.) from case for 10s
V
CE
I
C
600
12
6
V
A
I
Cpuls
-
18
18
V
GE
t
SC
±
20
5
V
μ
s
P
tot
88
W
T
j
T
stg
-40...+175
-55...+175
260
°
C
1
J-STD-020 and JESD-022
2)
Allowed number of short circuits: <1000; time between short circuits: >1s.
PG-TO-220-3-1
G
C
E
相關(guān)PDF資料
PDF描述
IGP10N60T Low Loss IGBT in TrenchStop and Fieldstop technology
IGP15N60T Low Loss IGBT in TrenchStop and Fieldstop technology
IGP30N60T LOW LOSS IGBT IN TRENCH AND FILEDSTOP TECHNOLOGY
IGW08T120 Low Loss IGBT in Trench and Fieldstop technology
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IGP06N60TXKSA1 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 600V 12A 3-Pin(3+Tab) TO-220AB 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 600V 12A 88W TO220-3
IGP10N60T 功能描述:IGBT 晶體管 LOW LOSS IGBT TECH 600V 10A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IGP10N60T_07 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Low Loss IGBT in TrenchStop and Fieldstop technology
IGP10N60TXKSA1 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 600V 20A 3-Pin(3+Tab) TO-220AB 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 600V 20A 110W TO220-3
IGP15N60T 功能描述:IGBT 晶體管 LOW LOSS IGBT TECH 600V 15A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
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