參數(shù)資料
型號: HYB39S256160T
廠商: SIEMENS AG
英文描述: 256 MBit Synchronous DRAM(256M位同步動態(tài)RAM)
中文描述: 256兆比特同步DRAM(256M位同步動態(tài)RAM)的
文件頁數(shù): 25/46頁
文件大?。?/td> 594K
代理商: HYB39S256160T
HYB39S256400/800/160AT
256 MBit Synchronous DRAM
25
6.2 Write Interrupted by a Read
(Burst Length = 4, CAS latency = 2, 3
7.1 Burst Write with Auto-Precharge
Burst Length = 2, CAS latency = 2, 3)
COMMAND
NOP
WRITE A
READ B
NOP
NOP
NOP
NOP
NOP
NOP
t
CK2,
DQ’s
CAS latency = 2
DIN A0
t
CK3,
DQ’s
CAS latency = 3
DIN A0
CLK
T0
T2
T1
T3
T4
T5
T6
T7
T8
Input data for the Write is ignored.
Input data must be removed from the DQ’s at least one clock
cycle before the Read data appears on the outputs to avoid
data contention.
don’t care
don’t care
don’t care
DOUT B0
DOUT B1
DOUT B2
DOUT B3
DOUT B0
DOUT B1
DOUT B2
DOUT B3
COMMAND
NOP
NOP
NOP
WRITE A
Auto-Precharge
CLK
T0
T2
T1
T3
T4
T5
T6
T7
T8
NOP
BANK A
ACTIVE
NOP
NOP
DIN A0
DIN A1
*
DQ’s
Begin Autoprecharge
Bank can be reactivated after trp
t
WR
t
RP
NOP
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