參數(shù)資料
型號: HYB39S256160T
廠商: SIEMENS AG
英文描述: 256 MBit Synchronous DRAM(256M位同步動態(tài)RAM)
中文描述: 256兆比特同步DRAM(256M位同步動態(tài)RAM)的
文件頁數(shù): 23/46頁
文件大小: 594K
代理商: HYB39S256160T
HYB39S256400/800/160AT
256 MBit Synchronous DRAM
23
4 2. Minimum Read to Write Interval
(Burst Length = 4, CAS latency = 2)
T0
4. 3. Non-Minimum Read to Write Interval
(Burst Length = 4, CAS latency = 2, 3
T0
COMMAND
NOP
BANK A
ACTIVATE
NOP
READ A
WRITE A
NOP
NOP
NOP
DQM
: “H” or “L”
DIN A0
DIN A1
DIN A2
DIN A3
Must be Hi-Z before
the Write Command
t
CK2,
DQ’s
CAS latency = 2
CLK
T2
T1
T3
T4
T5
T6
T7
T8
NOP
1 Clk Interval
t
DQZ
t
DQW
NOP
READ A
NOP
NOP
READ A
NOP
WRITE B
NOP
NOP
DQM
DIN B0
DIN B1
DIN B2
: “H” or “L”
t
CK2,
DQ’s
CAS latency = 2
CLK
T2
T1
T3
T4
T5
T6
T7
T8
DOUT A1
DOUT A0
DOUT A0
DIN B0
DIN B1
DIN B2
COMMAND
Must be Hi-Z before
the Write Command
t
CK3,
DQ’s
CAS latency = 3
t
DQZ
t
DQW
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