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參數(shù)資料
| 型號： | HYB25D512400AT-7 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | 512Mbit Double Data Rate SDRAM |
| 中文描述： | 512MB的雙倍數(shù)據(jù)速率SDRAM |
| 文件頁數(shù)： | 86/90頁 |
| 文件大?。?/td> | 3191K |
| 代理商： | HYB25D512400AT-7 |
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HYB25D512[40/16/80]0B[E/F/C/T]
512Mbit Double Data Rate SDRAM
System Characteristics for DDR SDRAMs
Data Sheet
86
Rev. 1.2, 2004-06
08122003-RMYD-6BJP
Table 25
Slew Rate Characteristic
Pullup Slew Rate
Pulldown Slew Rate
Output Slew Rate Characteristrics (
×
4,
×
8 Devices only)
Typical Range (V/ns) Minumum (V/ns)
1.2 – 2.5
1.2 – 2.5
Maximum (V/ns) Notes
4.5
4.5
1.0
1.0
1)2)3)4)5)6)
1) Pullup slew rate is characterized under the test conditions as shown in
Figure 52
2) Pullup slew rate is measured between (
V
DDQ
/2 – 320 mV
±
250 mV)
Pulldown slew rate is measured between (
DDQ
/2
+
320 mV
±
250 mV)
Pullup and Pulldown slew rate conditions are to be met for any pattern of data, including all outputs switching and only one
output switching.
Example: For typical slew rate, DQ0 is switching
For minimum slew rate, all DQ bits are switchiung worst case pattern
For maximum slew rate, only one DQ is switching from either high to low, or low to high.
the remainig DQ bits remain the same as previous state.
3) Evaluation conditions
Typical: 25 °C (T Ambient),
V
DDQ
= nominal, typical process
Minimum: 70 °C (T Ambient),
DDQ
= minimum, slow – slow process
Maximum: 0 °C (T Ambient),
V
DDQ
= maximum, fast – fast process
4) Verified under typical conditions for qualification purposes.
5) TSOP II package devices only.
6) Only intended for operation up to 266 Mbps per pin.
7) Pulldown slew rate is measured under the test conditions shown in
Figure 53
.
2)3)4)5)5)7)2)2)
Table 26
Slew Rate Characteristic
Pullup Slew Rate
Pulldown Slew Rate
Output Slew Rate Characteristics (
×
16 Devices only)
Typical Range (V/ns)
1.2 – 2.5
1.2 – 2.5
Minimum (V/ns)
0.7
0.7
Maximum(V/ns)
5.0
5.0
Notes
1)2)3)4)5)6)
1) Pullup slew rate is characterizted under the test conditions as shown in
Figure 52
2) Pullup slew rate is measured between (
V
DDQ
/2 – 320 mV
±
250 mV)
Pulldown slew rate is measured between (
DDQ
/2 + 320 mV
±
250mV)
Pullup and Pulldown slew rate conditions are to be met for any pattern of data, including all outputs switching and only one
output switching.
Example: For typical slew rate, DQ0 is switching
For minimum slew rate, all DQ bits are switchiung worst case pattern
For maximum slew rate, only one DQ is switching from either high to low, or low to high.
the remainig DQ bits remain the same as previous state.
3) Evaluation conditions
Typical: 25 °C (T Ambient),
V
DDQ
= nominal, typical process
Minimum: 70 °C (T Ambient),
DDQ
= minimum, slow – slow process
Maximum: 0 °C (T Ambient),
V
DDQ
= maximum, fast – fast process
4) Verified under typical conditions for qualification purposes.
5) TSOP II package devices only.
6) Only intended for operation up to 266 Mbps per pin.
7) Pulldown slew rate is measured under the test conditions shown in
Figure 53
.
7)
Table 27
Slew Rate Characteristic
Parameter
Output SLew Rate Matching
Ratio (Pullup to Pulldown)
Output Slew Rate Matching Ratio Characteristics
DDR266A
Min.
—
DDR266B
Min.
—
DDR200
Min.
0.71
Notes
Max.
—
Max.
—
Max.
1.4
1)
2)
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| HYB25D512800CE-5 | 功能描述:IC DDR SDRAM 512MBIT 66TSOP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:60 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:16K (2K x 8) 速度:2MHz 接口:SPI 3 線串行 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-DIP（0.300"，7.62mm） 供應商設備封裝:8-PDIP 包裝:管件 產品目錄頁面:1449 (CN2011-ZH PDF) |
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| HYB25DC512160CE-5 | 制造商:Infineon Technologies AG 功能描述: 制造商:QIMONDA 功能描述: |
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