參數(shù)資料
型號(hào): HYB25D256400T-8
英文描述: DDR Synchronous DRAM
中文描述: DDR同步DRAM
文件頁(yè)數(shù): 36/76頁(yè)
文件大小: 1218K
代理商: HYB25D256400T-8
HYB25D128400/800/160AT(L)
128-Mbit Double Data Rate SDRAM
Page 36 of 76
2002-05-06
Write to Read: Interrupting (CAS Latency = 2; Burst Length = 8)
T1
T2
T3
T4
T5
T6
t
DQSS
(max)
Maximum DQSS
N
OP
N
OP
N
OP
Read
W
rite
N
OP
DI a-b = data in for bank a, column b.
An interrupted burst is shown, 4 data elements are written.
3 subsequent elements of data in are applied in the programmed order following DI a-b.
t
W
TR
is referenced from the first positive CK edge after the last data in pair.
The Read command masks the last 2 data elements in the burst.
A10 is Low with the
W
rite command (Auto Precharge is disabled).
The Read and
W
rite commands are not necessarily to the same bank.
1 = These bits are incorrectly written into the memory array if DM is low.
DIa- b
CK
CK
Command
Address
DQS
DQ
DM
Don’t Care
BAa, COL b
BAa, COL n
t
W
TR
CL = 2
T1
T2
T3
T4
T5
T6
Minimum DQSS
N
OP
N
OP
N
OP
Read
W
rite
N
OP
CK
CK
Command
Address
BAa, COL b
BAa, COL n
t
W
TR
DI a-b
DQS
DQ
DM
CL = 2
t
DQSS
(min)
1
1
1
1
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