參數(shù)資料
型號(hào)： HYB18T512400AF-3.7
廠商： INFINEON TECHNOLOGIES AG
英文描述： 512-Mbit DDR2 SDRAM
中文描述： 512兆位DDR2 SDRAM的
文件頁數(shù)： 84/117頁
文件大?。?/td> 2102K
代理商： HYB18T512400AF-3.7
HYB18T512[40/80/16]0AF–[3/3S/3.7/5]
512-Mbit DDR2 SDRAM
AC & DC Operating Conditions
Data Sheet
84
Rev. 1.3, 2005-01
09112003-SDM9-IQ3P
Figure 67
Full Strength Default Pull–down Driver Diagram
5.5.1
Calibrated Output Driver V-I Characteristics
DDR2 SDRAM output driver characteristics are defined
for full strength calibrated operation as selected by the
procedure outlined in the Off-Chip Driver (OCD)
Impedance Adjustment. The
Table 36
and
Table 37
show the data in tabular format suitable for input into
simulation tools. The nominal points represent a device
at exactly 18 ohms. The nominal low and nominal high
values represent the range that can be achieved with a
maximum 1.5 ohms step size with no calibration error
at the exact nominal conditions only (i.e. perfect
calibration procedure, 1.5 ohm maximum step size
guaranteed by specification). Real system calibration
error needs to be added to these values. It must be
understood that these V-I curves are represented here
or in supplier IBIS models need to be adjusted to a
wider range as a result of any system calibration error.
Since this is a system specific phenomena, it cannot be
quantified here. The values in the calibrated tables
represent just the DRAM portion of uncertainty while
looking at one DQ only. If the calibration procedure is
used, it is possible to cause the device to operate
outside the bounds of the default device characteristics
tables and figure. In such a situation, the timing
parameters in the specification cannot be guaranteed.
It is solely up to the system application to ensure that
the device is calibrated between the minimum and
maximum default values at all times. If this can’t be
guaranteed by the system calibration procedure, re-
calibration policy and uncertainty with DQ to DQ
variation, it is recommended that only the default
values to be used. The nominal maximum and
minimum values represent the change in impedance
from nominal LOW and HIGH as a result of voltage and
temperature change from the nominal condition to the
maximum and minimum conditions. If calibrated at an
extreme condition, the amount of variation could be as
much as from the nominal minimum to the nominal
maximum or vice versa.
ECP
9287WR96649
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相關(guān)PDF資料
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HYB18T512160AF 512-Mbit DDR2 SDRAM
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HYB18T512160AF-3.7 512-Mbit DDR2 SDRAM
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYB18T512400AF-5 制造商:Intersil Corporation 功能描述:SDRAM, DDR, 128M x 4, 60 Pin, Plastic, BGA
HYB18T512400BF-3S 制造商:Qimonda 功能描述:
HYB18T512800AF-3S 制造商:Qimonda 功能描述: 制造商:Infineon Technologies AG 功能描述:32M X 16 DDR DRAM, 0.45 ns, PBGA84
HYB18T512800BF-2.5 功能描述:IC DDR2 SDRAM 512MBIT 60TFBGA RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:60 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:16K (2K x 8) 速度:2MHz 接口:SPI 3 線串行 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-DIP（0.300"，7.62mm） 供應(yīng)商設(shè)備封裝:8-PDIP 包裝:管件 產(chǎn)品目錄頁面:1449 (CN2011-ZH PDF)
HYB18T512800BF-3.7 功能描述:IC DDR2 SDRAM 512MBIT 60TFBGA RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:150 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:4K (2 x 256 x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-VFDFN 裸露焊盤 供應(yīng)商設(shè)備封裝:8-DFN（2x3） 包裝:管件 產(chǎn)品目錄頁面:1445 (CN2011-ZH PDF)
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